Batch Vertical CVD Film Formation Method
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Solution Overview
Problem
Current methods for forming amorphous carbon films in semiconductor processes are high in initial cost and low in productivity, and the films are prone to oxidation and degradation, which affects the quality and accuracy of subsequent film formation.
Innovation Solution
A film formation method and apparatus that uses a batch type vertical furnace to form a carbon film by CVD with a hydrocarbon gas, followed by an Si-containing inorganic film by CVD on the carbon film, maintaining a vacuum state throughout to prevent oxidation and enhance productivity and cost-effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If single substrate CVD is used to form amorphous carbon film, then film quality can be maintained, but initial cost is high and productivity is low
Solution Approach 1:
The patent combines the carbon film formation and Si-containing inorganic film formation processes into a single batch-type vertical CVD apparatus. Multiple substrates are processed simultaneously in one batch, and the two film formation steps are merged into one continuous operation without breaking vacuum, thereby improving productivity while maintaining film quality.
Solution Approach 2:
The vertical CVD apparatus is designed to perform multiple functions: forming both carbon films and Si-containing inorganic films using the same equipment. The gas supply system can switch between different film formation gases (hydrocarbon gas for carbon film, organic silicon source gas for Si-containing film), making the apparatus universal and eliminating the need for separate processing steps.
2Reliability
If amorphous carbon film is formed, then etching resistance is improved, but the film is prone to oxidation and degradation
Solution Approach 1:
The patent maintains continuous vacuum conditions throughout the process. The carbon film formation is immediately followed by Si-containing inorganic film formation without breaking vacuum or exposing the carbon film to atmospheric oxygen. This continuous operation prevents oxidation and degradation of the carbon film while preserving its etching resistance.
Solution Approach 2:
The process is conducted in a vacuum environment which acts as an inert atmosphere, preventing oxidation of the carbon film. The vacuum state is maintained between the carbon film formation and Si-containing film formation steps, creating a protective inert environment that prevents harmful oxidation reactions.
3Reliability
If multiple films are formed sequentially, then film quality can be maintained, but processing time increases
Solution Approach 1:
The patent eliminates idle time between film formation steps by maintaining continuous vacuum conditions. The transition from carbon film formation to Si-containing inorganic film formation is achieved by simply switching gas supply without breaking vacuum or repositioning substrates, thereby reducing processing time while maintaining film quality through continuous controlled environment.
Solution Approach 2:
Multiple film formation operations are merged into a single batch process. By placing multiple substrates in the vertical CVD apparatus and processing them simultaneously through sequential film deposition without breaking vacuum, the total processing time is reduced compared to individual substrate processing while maintaining quality standards.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high efficiency, high productivity, and low cost in forming multi-layered films while maintaining the quality of the carbon film, preventing oxidation and ensuring accurate etching in semiconductor processes.
Implementation Method 1
supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects
Implementation Method 2
supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film
Data Source
AI summary
A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.