BaTiO3 Dielectric Composition for Low-Temperature Sintering
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge is to develop a dielectric composition that can be sintered at low temperatures to prevent stress and short-circuiting in multilayer ceramic capacitors, while maintaining high capacitance and reliability, as existing compositions face issues with nickel internal electrode shrinkage and oxidation at high temperatures.
Innovation Solution
A dielectric composition incorporating BaTiO3 as the main ingredient and xB2O3-(1-x)BaO as an accessory ingredient, with x ranging from 0.25 to 0.8, along with additional auxiliary ingredients like BaO, SiO2, Al2O3, Y2O3, Mn3O4, ZrO2, and V2O5, which allows for sintering at 1050 to 1150°C, reducing shrinkage and oxidation risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Force
If sintering temperature is increased to improve densification and reduce porosity, then dielectric layer density is improved, but nickel internal electrode shrinks and aggregates causing stress and short-circuit
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric layer by incorporating specific amounts of B2O3 (0.1-5.0 wt%) and BaO (1.0-5.0 wt%) along with SiO2 and Al2O3. This compositional modification enables the dielectric layer to achieve adequate densification at lower sintering temperatures (1000-1200°C), thereby preventing nickel electrode shrinkage and aggregation while still reducing porosity to acceptable levels.
2Reliability
If sintering temperature is increased to improve dielectric properties, then insulation resistance is improved, but internal electrode oxidizes causing decreased capacitance
Solution Approach 1:
The patent modifies the chemical composition of the dielectric layer by adding B2O3, BaO, SiO2, and Al2O3 in specific proportions. This compositional change enables the formation of a stable, dense dielectric structure at lower sintering temperatures (1000-1200°C), which prevents oxidation of the nickel internal electrode while achieving adequate insulation resistance through the enhanced dielectric properties of the modified composition.
3Quantity of substance
If dielectric layer thickness is reduced to increase capacitance, then capacitance is improved, but electrode connectivity becomes more critical and reliability decreases
Solution Approach 1:
The patent changes the chemical composition of the dielectric layer to include B2O3 (0.1-5.0 wt%), BaO (1.0-5.0 wt%), SiO2 (5.0-20.0 wt%), and Al2O3 (5.0-20.0 wt%). This compositional modification enables ultra-thin dielectric layers (1-10 μm) to achieve sufficient densification and mechanical strength at lower sintering temperatures, thereby maintaining electrode connectivity and reliability even when thickness is reduced to increase capacitance.
4Reliability
If sintering temperature is reduced to prevent electrode shrinkage, then electrode connectivity is improved, but densification and porosity reduction become insufficient
Solution Approach 1:
The patent modifies the dielectric layer composition by incorporating B2O3 (0.1-5.0 wt%), BaO (1.0-5.0 wt%), SiO2 (5.0-20.0 wt%), and Al2O3 (5.0-20.0 wt%). This compositional change enables the dielectric layer to achieve adequate densification and porosity reduction at lower sintering temperatures (1000-1200°C), thereby maintaining electrode connectivity while still achieving sufficient densification through the enhanced sintering activity of the modified composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This composition enables reliable, high-capacitance multilayer ceramic electronic components with improved insulation resistance and reduced porosity, preventing short-circuits and maintaining performance at high temperatures.
Implementation Method 1
a dielectric composition capable of being sintered at a low temperature of 1200° C. or less has been required
Data Source
AI summary
There is provided a dielectric composition for low-temperature sintering including BaTiO3 as a main ingredient, and xB2O3-(1-x)BaO as an accessory ingredient, wherein x ranges from 0.25 to 0.8, and the content of the accessory ingredient ranges from 0.1 to 2.00 mol %, based on 100 mol % of the main ingredient.