Battery Protection Amplifier Circuit With Potential Holding

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Solution Overview

Problem

Existing battery protection circuits face challenges in reducing power consumption while maintaining effective abnormality detection and control functions, particularly in multi-cell battery stacks.

Innovation Solution

A semiconductor device incorporating a novel amplifier circuit and capacitor configuration with metal oxide transistors, including indium and gallium, to enhance signal amplification and potential holding, reducing power consumption by optimizing the operating point and expanding the output range.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional amplifier circuits are used in battery protection circuits, then abnormality detection and control functions can be implemented, but power consumption is high

Engineering Contradiction:
Improvepower consumptionVSAvoidabnormality detection capability
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent changes the operating parameters of the amplifier circuit by introducing a capacitor connected to the input terminal through a transistor. This capacitor holds the input potential when the transistor is off, allowing the amplifier to operate at lower power consumption levels while maintaining its abnormality detection function. The parameter change involves transitioning from continuous operation to intermittent operation with potential holding.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent extracts the potential holding function from the continuous operation of the amplifier circuit and implements it separately using a capacitor and transistor combination. This allows the main amplifier circuit to be turned off or operated at reduced power while the capacitor maintains the necessary input potential, thus separating the detection function from continuous power consumption.

Inventive Principle:
Principle #2Taking out (Extraction)

2Adaptability or versatility

If the output range of the amplifier circuit is limited, then circuit complexity is reduced, but the ability to detect and respond to various abnormal conditions is compromised

Engineering Contradiction:
Improveoutput rangeVSAvoidcircuit complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent introduces dynamic control of the amplifier output range through a transistor that can switch the connection state of the capacitor to the input terminal. This dynamic element allows the circuit to adapt its output range based on operating conditions, expanding the versatility for detecting different abnormal conditions while managing circuit complexity through controlled dynamism rather than fixed multi-range switching.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11916065B2Semiconductor device and method for operating semiconductor device
Publication Date: 2024.02.27 SEMICON ENERGY LAB CO LTD
  • US11916065B2 patent drawing
  • US11916065B2 patent drawing
  • US11916065B2 patent drawing

AI summary

A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electronic device, and the like are provided. The semiconductor device includes a capacitor, a first amplifier circuit including a first output terminal electrically connected to a first electrode of the capacitor, and a second amplifier circuit including an input terminal, a second output terminal, a first transistor, and a second transistor; a second electrode of the capacitor is electrically connected to the input terminal; the input terminal is electrically connected to a gate of the first transistor and one of a source and a drain of the second transistor; one of a source and a drain of the first transistor is electrically connected to the second output terminal; the second transistor has a function of supplying a potential to the input terminal and holding the potential; and a channel formation region of the second transistor includes a metal oxide containing at least one of indium and gallium.