BAW Duplexer Resonators With Top and Bottom Mass Loading
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Solution Overview
Problem
Existing bulk acoustic wave (BAW) resonators on a single die typically operate at the same frequency, limiting the ability to form filters or duplexers with different frequency bands efficiently, which increases device footprint and manufacturing costs.
Innovation Solution
The use of top and bottom mass loading layers on piezoelectric material films of BAW resonators to adjust their operating frequencies, allowing multiple resonators with different frequencies to be formed on the same die, forming filters or duplexers with non-overlapping passbands.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If multiple BAW resonators with different operating frequencies are formed on a single die, then device footprint and manufacturing costs are reduced, but the resonators cannot efficiently form filters or duplexers with different frequency bands
Solution Approach 1:
The patent applies local quality by introducing mass loading layers at specific locations (top and bottom surfaces) of selected BAW resonators. This localized modification changes the physical properties (mass) of specific resonators to adjust their operating frequencies, enabling frequency differentiation while maintaining integration on a single die.
Solution Approach 2:
The patent changes the physical parameter of mass by adding mass loading layers to the BAW resonators. This parameter change directly affects the resonating frequency of the resonators, allowing multiple resonators on the same die to operate at different frequencies and form filters or duplexers with non-overlapping passbands.
2Ease of manufacture
If multiple BAW resonators with different operating frequencies are formed on a single die, then manufacturing costs are reduced, but the resonators cannot efficiently form filters or duplexers with different frequency bands
Solution Approach 1:
The patent applies local quality by introducing mass loading layers at specific locations (top and bottom surfaces) of selected BAW resonators. This localized modification changes the physical properties (mass) of specific resonators to adjust their operating frequencies, enabling frequency differentiation while maintaining integration on a single die.
Solution Approach 2:
The patent changes the physical parameter of mass by adding mass loading layers to the BAW resonators. This parameter change directly affects the resonating frequency of the resonators, allowing multiple resonators on the same die to operate at different frequencies and form filters or duplexers with non-overlapping passbands.
3Adaptability or versatility
If mass loading layers are added to BAW resonators to adjust operating frequencies, then frequency differentiation is achieved, but device complexity increases
Solution Approach 1:
The patent merges the mass loading function with the existing BAW resonator structure by integrating mass loading layers into the resonator fabrication process. This combining approach achieves frequency differentiation without requiring separate adjustment mechanisms, thereby limiting the increase in device complexity.
Solution Approach 2:
The mass loading layers serve multiple functions: they adjust the operating frequency of resonators and can be selectively applied to different resonators to create frequency differentiation. This multi-functionality reduces the need for additional components or structures, limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces device footprint and manufacturing costs by enabling resonators with varied frequencies on a single die, improving performance and flexibility in radio frequency applications.
Implementation Method 1
each of the plurality of bulk acoustic wave resonators including a piezoelectric material film having an active region
Implementation Method 2
a first subset with metallic mass loading layers disposed above an upper electrode disposed on the piezoelectric material film in the active region and a second subset with metallic mass loading layers disposed below a lower electrode disposed on the piezoelectric material film in the active region to cause the first subset to exhibit a different operating frequency than the second subset
Data Source
AI summary
Aspects and embodiments disclosed herein include a die comprising a plurality of bulk acoustic wave resonators. Each of the plurality of bulk acoustic wave resonators includes a piezoelectric material film having an active region. The plurality of bulk acoustic wave resonators include a first subset with metallic mass loading layers disposed above an upper electrode disposed on the piezoelectric material film in the active region and a second subset with metallic mass loading layers disposed below a lower electrode disposed on the piezoelectric film in the active region to cause the first subset to exhibit a different operating frequency than the second subset.