BAW Filter Frequency Shifting With Mass-Loaded Lithium Niobate Resonators

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Solution Overview

Problem

Current techniques for manufacturing radio frequency filters using lithium niobate piezoelectric materials face challenges in achieving precise frequency shifting and maintaining electromechanical coupling coefficients due to difficulties in depositing and etching lithium niobate, leading to degradation of piezoelectric properties and unsuitable bandwidth for 5G mobile telephony applications.

Innovation Solution

A method involving a piezoelectric substrate on insulator with a mass overload pattern formed by lift-off of a sacrificial layer, allowing for precise adjustment of electrode thicknesses close to the piezoelectric layer without damaging the material, enabling the use of monocrystalline materials like lithium niobate for broadband filters.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional deposition and etching techniques are used on lithium niobate, then electrode structures can be formed, but the piezoelectric properties are degraded

Engineering Contradiction:
Improveease of forming electrode structuresVSAvoidpiezoelectric properties
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

A sacrificial layer is introduced as an intermediary element between the electrode and the lithium niobate piezoelectric layer. This sacrificial layer enables the formation of electrode structures through conventional deposition and etching techniques while protecting the piezoelectric properties of lithium niobate. After the electrode is formed, the sacrificial layer is removed, leaving the electrode structure in place without having directly contacted or degraded the piezoelectric material.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If aluminum nitride or aluminum scandium nitride is used as piezoelectric material, then manufacturing is easier, but the electromechanical coupling coefficient is too low for broadband filters

Engineering Contradiction:
Improveease of depositing and etchingVSAvoidelectromechanical coupling coefficient
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The invention changes the piezoelectric material parameter from conventional aluminum nitride or aluminum scandium nitride to lithium ni obate, which has a significantly higher electromechanical coupling coefficient (greater than six times that of aluminum nitride). This parameter change enables broadband filter performance with coupling coefficients exceeding 45%, while the associated deposition and etching challenges are resolved through the sacrificial layer technique.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If the resonance frequency of the parallel resonator is shifted by varying piezoelectric layer thickness, then frequency tuning is achieved, but the process is complex and imprecise

Engineering Contradiction:
Improvefrequency shifting precisionVSAvoidprocess complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The invention extracts the frequency shifting function from the piezoelectric layer thickness variation and relocates it to a mass overload layer applied to the electrode. This separation allows the piezoelectric layer to maintain uniform thickness for optimal electromechanical coupling, while the mass overload layer provides precise frequency tuning through its mass effect on the resonator's mechanical properties.

Inventive Principle:
Principle #2Taking out (Extraction)

4Ease of manufacture

If aluminum electrode layer is deposited and then etched on lithium niobate, then electrode patterns are formed, but inter-diffusion occurs degrading piezoelectric properties

Engineering Contradiction:
Improveease of forming electrode patternsVSAvoidinter-diffusion between aluminum and piezoelectric material
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The sacrificial layer serves as a protective intermediary between the aluminum electrode material and the lithium ni obate piezoelectric layer during the deposition and etching processes. This intermediary prevents direct contact and inter-diffusion between the aluminum and piezoelectric material, thereby preserving the piezoelectric properties. The sacrificial layer is subsequently removed, leaving clean interfaces without inter-diffusion damage.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method preserves the electrodes and piezoelectric properties, achieving the required bandwidth and frequency shifting with improved electromechanical coupling, suitable for 5G filter specifications.

Implementation Method 1

BAW resonators exploit the propagation of acoustic waves in piezoelectric layers

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

the total thickness of the mass overload pattern(s) being chosen to shift the resonance frequency of the second resonator with the predetermined shift

Methodology Applied
Scientific EffectMass loading effect:

Data Source

PatentEP4391374A1Method for producing a bulk acoustic wave filter
Publication Date: 2024.06.26 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • EP4391374A1 patent drawingFigure 1~2
  • EP4391374A1 patent drawingFigure 3A~3D
  • EP4391374A1 patent drawingFigure 3E~3F

AI summary

One aspect of the invention relates to a method for making a bandpass filter comprising a first body-wave acoustic resonator (1) and a second body-wave acoustic resonator (2), the resonance frequency of the second resonator being shifted from the resonance frequency of the first resonator by a predetermined shift, the method comprising the steps of: - supplying a piezoelectric substrate (10) on an insulator, - forming a lower electrode (31) of the first resonator (1) and a lower electrode (32) of the second resonator (2), - gluing the donor substrate (10) onto a receiving substrate (50), - removing the donor substrate (10) with a stop on the piezoelectric layer (13), - forming an upper electrode (33) of the first resonator (1) and an upper electrode (34), the formation of the lower electrodes (31,32) being preceded by a step of forming a mass overload pattern (20) at the level of the second zone (134), and/or the formation of the upper electrodes (33,34) being preceded by a step of forming a mass overload pattern (21) at the level of the second zone (134), the total thickness of the mass overload pattern(s) (20,21) being chosen to shift the resonance frequency of the second resonator with the predetermined shift.