Multi-Layer Raised Frame for BAW Filters With Lower Insertion Loss
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Solution Overview
Problem
Existing bulk acoustic wave (BAW) filters face challenges in achieving low insertion loss and low Gamma loss, which are crucial for high-performance radio frequency electronic systems.
Innovation Solution
The implementation of a bulk acoustic wave device with a multi-layer raised frame structure, comprising a first raised frame layer with lower acoustic impedance and a second raised frame layer with higher density, positioned between electrodes and a piezoelectric layer, effectively blocks lateral energy leakage and moves the raised frame mode away from the main resonant frequency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a raised frame structure is added to block lateral energy leakage, then insertion loss is reduced, but device complexity increases
Solution Approach 1:
The raised frame structure is divided into multiple segments: a first raised frame layer (silicon dioxide) and a second raised frame layer (metal), each serving specific functions. This segmentation allows the structure to block lateral energy leakage effectively while managing acoustic impedance transitions, thereby reducing insertion loss without excessive complexity
Solution Approach 2:
The raised frame structure uses composite materials combining silicon dioxide (first raised frame layer) and metal (second raised frame layer). This composite approach optimizes acoustic impedance matching and blocking characteristics, achieving low insertion loss by preventing lateral energy leakage into passive regions while maintaining a manageable structural complexity
2Loss of energy
If a raised frame structure is added to improve quality factor, then Gamma loss is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The raised frame is segmented into two layers with distinct materials and positions. The first layer (silicon dioxide) provides acoustic isolation, while the second layer (metal) enhances mechanical support and acoustic blocking. This segmentation achieves high quality factor and low Gamma loss by effectively trapping acoustic energy, while the standardized layering approach facilitates manufacturing
Solution Approach 2:
The patent specifies particular material parameters (silicon dioxide for the first layer, metal for the second layer) and their acoustic impedance characteristics. By controlling these material parameters and their arrangement, the structure achieves optimal acoustic energy confinement, improving quality factor and reducing Gamma loss with manufacturable precision requirements
3Loss of energy
If the first raised frame layer with lower acoustic impedance is positioned between the piezoelectric layer and the first electrode, then lateral energy leakage is blocked, but the number of layers increases
Solution Approach 1:
The first raised frame layer made of silicon dioxide acts as an intermediary layer between the piezoelectric layer and the first electrode. This intermediate structure provides acoustic impedance transition and blocking, effectively preventing lateral energy leakage into passive regions. The intermediary layer integrates seamlessly into the existing FBAR structure, adding minimal complexity while achieving effective energy confinement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces insertion loss and Gamma loss, enhancing the quality factor (Q) and reflection coefficient (Gamma) of the BAW filter, thereby improving the overall performance of the device.
Implementation Method 1
The first raised frame layer has a lower acoustic impedance than the first electrode
Implementation Method 2
The multi-layer raised frame structure can block lateral energy leakage from the active region to a passive region of the bulk acoustic wave device
Implementation Method 3
In BAW resonators, acoustic waves propagate in a bulk of a piezoelectric layer
Data Source
AI summary
Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.


