BAW Resonator Heat-Dissipation Layer for Higher Q Value
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Solution Overview
Problem
BAW resonance devices have limited heat-dissipation capacity, which restricts the improvement of their performance, particularly in maintaining a high quality factor (Q value) and efficient heat dissipation.
Innovation Solution
Incorporating a heat-dissipation layer made of materials like aluminum nitride, silicon carbide, or diamond on a substrate or intermediate layer within the BAW resonance device to enhance and adjust heat dissipation performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a BAW resonance device uses a conventional substrate without additional heat-dissipation structures, then the device structure remains simple, but the heat-dissipation capacity is limited and the Q value cannot be sufficiently improved
Solution Approach 1:
The patent applies composite materials by integrating a heat-dissipation layer made of high thermal conductivity materials (such as diamond, cubic silicon carbide, or hexagonal silicon carbide) with the conventional substrate and BAW resonance device structure. This composite structure combines the mechanical support function of the substrate with the thermal management function of the heat-dissipation layer, thereby improving the Q value and heat-dissipation capacity without significantly complicating the overall device structure.
Solution Approach 2:
The heat-dissipation layer acts as an intermediary component between the substrate and the BAW resonance device. It mediates the thermal energy transfer from the resonance device to the substrate, enhancing heat dissipation efficiency. This intermediary layer resolves the contradiction by providing a dedicated thermal management pathway that improves reliability without requiring fundamental changes to the device architecture.
2Temperature
If the BAW resonance device relies solely on substrate heat dissipation, then the device structure remains simple, but the heat-dissipation capacity cannot be improved or adjusted
Solution Approach 1:
The patent employs parameter changes by varying the material composition, thickness, and thermal conductivity of the heat-dissipation layer to optimize heat-dissipation capacity for different application requirements. By adjusting these parameters, the device can be tailored to achieve specific Q values and thermal management performance, thereby improving adaptability without compromising structural simplicity.
Solution Approach 2:
The heat-dissipation layer is strategically positioned in specific regions where heat generation is most intense, such as beneath the piezoelectric layer and electrode structures. This local quality approach concentrates thermal management resources where they are most needed, improving overall heat-dissipation capacity and adjustability while maintaining a relatively simple global device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The heat-dissipation layer improves the Q value and compensates for the limited heat-dissipation capacity of BAW resonance devices, leading to better thermal management and performance.
Implementation Method 1
a heat-dissipation layer which is located on a substrate or an intermediate layer and can improve or flexibly adjust the heat-dissipation performance of the BAW resonance device
Implementation Method 2
metals on two sides of a piezoelectric layer of the resonator alternately generate positive and negative voltages through which the piezoelectric layer generates acoustic waves
Implementation Method 3
on account of the large difference in acoustic impedance between air and metal electrodes, acoustic waves can be totally reflected on the upper surface of the upper metal electrode and the lower surface of the lower metal electrode to generate standing waves
Data Source
AI summary
A BAW resonance device, a filter device and an RF front-end device are provided. The BAW resonance device comprises a first passive part including a first substrate and a first heat-dissipation layer located over the first substrate; a first active part including a first piezoelectric layer, a first electrode layer and a second electrode layer, wherein the first piezoelectric layer is located over the first passive part and has a first side and a second side opposite to the first side, the first passive part is located on the first side, the first electrode layer is also located on the first side and is disposed between the first passive part and the first piezoelectric layer, and the second electrode layer is located on the second side; and a first cavity located on the first side and disposed between the first passive part and the first piezoelectric layer, wherein at least one part of the first electrode layer is located on or in the first cavity. The first heat-dissipation layer can improve or flexibly adjust the heat-dissipation performance of the SAW resonance device.