BAW Resonator Coupler Structure for Improved TCF at High Order Modes
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Solution Overview
Problem
BAW resonators face challenges in high-frequency applications due to increased electrical loss, poor temperature coefficient of frequency (TCF), and fabrication difficulties with high order mode operation, particularly when using piezoelectric layers with opposite polarities.
Innovation Solution
Incorporating a coupler layer with a dielectric material and conductive vias between piezoelectric layers of the same polarity to excite high order modes, ensuring the stress field aligns in the same direction and reducing potential difference across electrodes, thereby improving TCF and simplifying fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If BAW resonators use thinner electrodes and smaller resonator areas to operate at higher frequencies, then frequency of operation is improved, but electrical loss increases
Solution Approach 1:
The patent transitions from fundamental mode operation to high order mode operation, effectively changing the dimensional characteristics of the acoustic wave propagation. This allows the resonator to achieve higher frequencies while maintaining larger electrode areas and resonator dimensions, thereby reducing electrical loss while operating at frequencies greater than 5 GHz
2Power
If BAW resonators use cascaded structure with multiple piezoelectric layers to reduce power density, then power density is reduced, but temperature coefficient of frequency deteriorates
Solution Approach 1:
The patent modifies the stress profile parameters within the piezoelectric layers by operating in high order modes. This changes the mechanical stress distribution such that the net stress on the piezoelectric material is reduced, thereby improving the temperature coefficient of frequency while maintaining the power density benefits of the cascaded structure
3Speed
If BAW resonators use high order mode operation with polarity inversion in piezoelectric layers, then frequency of operation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent inverts the conventional approach to high order mode operation. Instead of using piezoelectric layers with opposite polarities, it uses layers with the same polarity and achieves high order mode operation through boundary conditions and layer thickness design. This eliminates the complex polarity inversion fabrication process while maintaining high frequency operation capabilities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resonator structure achieves improved TCF, reduced power density, and simplified manufacturing by eliminating the need for polarity inversion, while maintaining a larger resonator area and electromechanical coupling.
Implementation Method 1
a first piezoelectric layer, a second piezoelectric layer... The BAW resonator is configured to excite a high order mode through the first piezoelectric layer, the coupler layer, and the second piezoelectric layer
Implementation Method 2
the dielectric layer includes a dielectric material having a positive temperature coefficient of velocity (TCV)
Implementation Method 3
at least one conductive via electrically connecting the first metal layer and the second metal layer
Data Source
AI summary
An acoustic resonator includes a first piezoelectric layer, a second piezoelectric layer, and a coupler layer between the first piezoelectric layer and the second piezoelectric layer. The first piezoelectric layer and the second piezoelectric layer have a same polarity. The coupler layer includes a first metal layer, a second metal layer, a dielectric layer between the first metal layer and the second metal layer, and conductive vias through the dielectric layer and electrically connecting the first metal layer and the second metal layer. A first electrode is positioned on the first piezoelectric layer opposite the coupler layer. A second electrode is positioned on the second piezoelectric layer opposite the coupler layer.


