BAW Resonator Underlap Structure for Spurious Mode Suppression

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Solution Overview

Problem

Current BAW resonators face challenges in achieving a higher quality factor (Q) due to spurious mode excitation and energy loss, which affects their performance in RF filter applications.

Innovation Solution

The BAW resonator design incorporates a laterally structured layer stack with a reduced thickness in the underlap region relative to the center region, optimized electrode layer thickness adjustments, and the use of a dielectric trimming layer to minimize spurious modes and enhance the Q factor, while maintaining uniform layer thickness and energy distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the underlap region thickness is reduced to suppress spurious modes, then the Q factor increases, but the manufacturing precision requirements increase

Engineering Contradiction:
ImproveQ factorVSAvoidthickness control precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating an underlap region with different thickness characteristics compared to the center region. Specifically, the underlap region has a reduced thickness (dU < dC) while the center region maintains the full design thickness. This localized thickness variation suppresses spurious modes at the edges without affecting the primary resonance in the center, thereby increasing the Q factor while maintaining manufacturability through focused precision requirements only where needed.

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If the layer stack thickness is kept uniform, then the manufacturing complexity is reduced, but the spurious mode suppression is compromised

Engineering Contradiction:
Improvelayer stack uniformityVSAvoidspurious modes
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The patent resolves this contradiction by implementing local quality through the underlap region structure. The center region maintains uniform thickness for ease of manufacture, while the underlap region introduces localized thickness reduction to suppress spurious modes. This approach allows the majority of the structure to be manufactured with standard uniformity tolerances while achieving spurious mode suppression through the specifically designed underlap zones.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively suppresses spurious modes, increases the Q factor, and optimizes energy distribution within the resonator, leading to improved performance and frequency accuracy in RF filters.

Implementation Method 1

Due to the piezoelectric effect such resonators convert between RF signals and acoustic waves if an RF signal is applied to the resonator electrodes

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

An acoustic Bragg mirror is arranged between the sandwich construction of the resonator and the substrate onto which the layer stack is deposited

Methodology Applied
Scientific EffectAcoustic reflection: Reflection

Implementation Method 3

An acoustic Bragg mirror comprises at least one pair of mirror layers with alternating high and low acoustic impedance

Methodology Applied
Scientific EffectAcoustic impedance mismatch: Acoustic Radiation Pressure

Data Source

PatentUS11509286B2BAW resonator with increased quality factor
Publication Date: 2022.11.22 RF360 SINGAPORE PTE LTD
  • US11509286B2 patent drawing
  • US11509286B2 patent drawing
  • US11509286B2 patent drawing

AI summary

A BAW resonator comprises a center area (CA), an underlap region (UL) surrounding the center area having a thickness smaller than the thickness dC of the center region and a frame region (FR), surrounding the underlap region having thickness dF greater than dC.