BaZrO3 Single Crystal Growth via Optical Floating Zone
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Solution Overview
Problem
Existing methods, such as the Czochralski method, are limited in synthesizing compounds with a melting point of 2,200° C. or more into single crystals, restricting the development of semiconductor devices with enhanced performance and unique physical properties.
Innovation Solution
A method involving the preparation of a barium zirconium oxide (BaZrO3) single crystal ingot using an optical floating zone furnace with a xenon lamp or laser as a light source, where BaZrO3 ceramics are pulverized, sintered, and melted at 2,600° C. to 3,500° C. to achieve excellent crystallinity and grow a single crystal ingot.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the Czochralski method is used to grow single crystals, then large-area single crystals can be obtained, but compounds with melting point of 2,200°C or more cannot be synthesized into single crystals
Solution Approach 1:
The patent changes the temperature parameter by using a floating zone method that can achieve local temperatures of 2,600-3,500°C at the molten zone, which is higher than the melting point of BaZrO3 (2,200°C or more). This temperature parameter change enables the synthesis of high melting point compounds that cannot be processed by conventional Czochralski method
Solution Approach 2:
The patent replaces the mechanical contact-based Czochralski method with an optical-based floating zone method using xenon lamp or laser light sources. This substitution allows non-contact heating and enables processing of high melting point materials without contamination from crucible materials
2Manufacturing precision
If optical floating zone furnace with xenon lamp or laser is used to melt BaZrO3 at 2,600°C to 3,500°C, then single crystal with excellent crystallinity can be grown, but high energy consumption is required
Solution Approach 1:
The patent applies local quality by concentrating optical energy only at the specific location where the molten zone needs to be formed and maintained. The xenon lamp or laser light source focuses energy on a small region (the interface between seed crystal and feed stock), rather than heating the entire system, thus achieving high local temperature for excellent crystallinity while minimizing overall energy consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the growth of single crystals with high melting points, overcoming the limitations of existing methods and achieving excellent crystallinity, making the BaZrO3 single crystal ingot suitable for use as a semiconductor wafer with improved performance and unique properties.
Implementation Method 1
melting the junction at a temperature of 2,600° C. to 3,500° C. using light emitted from a xenon lamp or laser
Implementation Method 2
after the melting, moving the two cylindrical BaZrO3 ceramics in a direction parallel to an axis of rotation thereof, enabling the molten junction to be solidified, and thereby growing a single crystal
Data Source
AI summary
Disclosed is a method of preparing single crystal ingot of barium zirconium oxide. The method includes preparing a cylindrical BaZrO3 ceramic by pulverizing a BaZrO3 compound into a powder and sintering the same into a cylindrical ceramic form, ii) fixing two cylindrical BaZrO3 ceramics to an optical floating zone furnace, joining the two cylindrical BaZrO3 ceramics together and melting the junction at a temperature of 2,600 to 3,500° C. using light emitted from a xenon lamp or laser, and after the melting, moving the two cylindrical BaZrO3 ceramics in a direction parallel to an axis of rotation thereof, enabling the molten junction to be solidified, and thereby growing a single crystal.