Embedded Interconnect Bridge in BBUL Substrates for Dense Die Routing
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Solution Overview
Problem
Current semiconductor devices face challenges with low-density substrate routing, which increases system board area, power loss, complexity, and cost due to lower routing density compared to chip-level routing, and traditional solutions like silicon interposers are costly and complex.
Innovation Solution
Incorporating a high-density interconnect element, such as a silicon or glass die interconnect bridge, within a bumpless buildup layer (BBUL) substrate to enable localized high-density routing, reducing the need for first-level interconnects and allowing for more efficient chip-to-chip connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional substrate routing is used, then the substrate can be manufactured with standard processes, but the routing density is lower than chip-level routing
Solution Approach 1:
The substrate is divided into multiple routing layers with different density characteristics. High-density routing is implemented in specific localized regions using specialized techniques, while other areas use standard substrate routing processes. This segmentation allows achieving high routing density where needed without requiring the entire substrate to use complex high-density processes.
Solution Approach 2:
Different routing density levels are implemented in different regions of the substrate. Areas requiring high connectivity use high-density interconnect structures, while other areas use standard routing. This local quality approach optimizes performance in critical regions while maintaining manufacturing feasibility overall.
2Manufacturing precision
If silicon interposers are used to achieve high-density routing, then routing density increases, but the cost and complexity of the package increases
Solution Approach 1:
The high-density interconnect functionality is extracted from a separate silicon interposer component and integrated directly into the substrate structure. This eliminates the need for a distinct interposer layer, reducing package complexity while maintaining the high routing density capability in the substrate itself.
Solution Approach 2:
The substrate and interconnect functions are merged into a single integrated structure. Instead of having separate substrate and silicon interposer components, the high-density routing is built directly into the substrate, combining multiple functions into one component and simplifying the overall package architecture.
3Manufacturing precision
If high-density interconnect elements are embedded in the substrate, then local routing density increases, but the manufacturing process becomes more complex
Solution Approach 1:
High-density interconnect elements are embedded in the substrate during the substrate manufacturing process itself, before final assembly. This preliminary integration allows the complex structures to be formed when the substrate material is in a more manageable state, rather than attempting to add them later as separate components.
Solution Approach 2:
Standard substrate manufacturing processes serve as an intermediary framework that accommodates the high-density interconnect elements. The established substrate fabrication steps provide a familiar process backbone, with specialized high-density routing techniques integrated at appropriate stages, bridging between conventional manufacturing and advanced routing requirements.
Data Source
AI summary
Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.