BDEAS PEALD Silicon Oxide Deposition for High-Aspect Trenches
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Solution Overview
Problem
Conventional plasma-enhanced atomic layer deposition (PEALD) methods using bis(diethylamino)silane (BDEAS) struggle to achieve high-quality silicon oxide films at the sidewalls and bottom of trenches with high aspect ratios due to the anisotropic nature of plasma, despite increasing RF power and pulse duration, which do not sufficiently improve film quality.
Innovation Solution
Increasing the deposition temperature above 400°C but below 650°C, while maintaining a controlled atmosphere to suppress thermal decomposition of BDEAS, allows for improved film quality by adsorbing BDEAS on a substrate and exposing it to oxygen plasma, resulting in a stable and high-quality silicon oxide film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If RF power and pulse duration are increased to improve film quality, then film quality on top surface is improved, but film quality at sidewalls and bottom of high aspect ratio trenches remains insufficient due to anisotropic plasma
Solution Approach 1:
The patent changes the deposition temperature parameter to above 400°C (e.g., 450-650°C) to improve film quality at sidewalls and bottom of trenches. This temperature increase enhances the adisorption and reaction kinetics of BDEAS precursor, enabling better film formation in high aspect ratio trenches where conventional lower temperature processes fail, thus resolving the uniformity issue across different trench regions.
2Manufacturing precision
If deposition temperature is increased above 400°C to improve film quality at trench sidewalls and bottom, then film quality is improved, but thermal decomposition of BDEAS may occur producing carbon, nitrogen, and hydrogen
Solution Approach 1:
The patent optimizes the deposition temperature parameter to a specific range above 400°C (e.g., 450-650°C) where BDEAS maintains stability without significant thermal decomposition. This controlled temperature parameter change enables improved film quality at trench sidewalls and bottom while avoiding the formation of harmful carbon, nitrogen, and hydrogen byproducts that would occur at higher temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the chemical resistance and etching properties of silicon oxide films at sidewalls and bottoms of trenches, achieving improved film quality and reduced carbon, nitrogen, and hydrogen content, even at high temperatures.
Implementation Method 1
adsorbing BDEAS on the substrate placed on a susceptor
Implementation Method 2
exposing the substrate on which BDEAS is adsorbed to an oxygen plasma
Implementation Method 3
plasma-enhanced atomic layer deposition (PEALD)
Implementation Method 4
substrate placed on a susceptor having a temperature of higher than 400° C.
Data Source
AI summary
In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.