BDEAS Silicon Dioxide Deposition for Low-Temperature Resist Protection
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Solution Overview
Problem
Conventional silicon dioxide deposition processes damage photoresist layers due to high temperatures and active plasma species, leading to non-conformal coatings and poor patterning results, particularly in the fabrication of multilayer etch-resistant stacks and through-silicon vias.
Innovation Solution
A method involving the use of Bis(diethylamino) silane (BDEAS) and an oxygen-containing gas, such as ozone, is employed to deposit a conformal silicon dioxide layer at low temperatures, avoiding plasma-generated reactive radicals and maintaining the integrity of photoresist features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional silicon dioxide deposition is performed at high temperatures (>200°C), then deposition rate and film quality are improved, but photoresist layer is damaged or eroded by active oxygen ions in plasma
Solution Approach 1:
The patent changes the deposition temperature parameter from conventional high temperatures (>200°C) to low temperatures (<200°C), and modifies the plasma composition by using a sulfur-containing gas (H2S, CS2, or SF6) instead of conventional oxygen-based plasma, enabling conformal deposition without photoresist damage
Solution Approach 2:
The patent introduces a sulfur-containing gas as an intermediary substance that mediates the deposition process, allowing silicon dioxide to be deposited conformally at low temperatures without requiring aggressive oxygen plasma that would damage the photoresist layer
2Object-affected harmful factors
If silicon dioxide deposition temperature is reduced to protect photoresist, then photoresist damage is minimized, but non-conformal silicon dioxide layers are deposited
Solution Approach 1:
The patent simultaneously optimizes multiple parameters: lowering temperature to protect photoresist while introducing sulfur-containing gases and adjusting pressure conditions to enable conformal deposition, resolving the trade-off between temperature protection and deposition quality
Solution Approach 2:
The patent uses a composite gas mixture containing sulfur-containing compounds (H2S, CS2, or SF6) combined with silane-based precursors, creating a chemically reactive environment that enables conformal low-temperature deposition without compromising photoresist integrity
3Manufacturing precision
If conventional high temperature processes are used for TSV fabrication, then silicon dioxide liner quality is improved, but adhesive bonding degrades at temperatures above 200°C
Solution Approach 1:
The patent changes the deposition temperature parameter from conventional high temperatures to low temperatures (<200°C), preserving adhesive bonding strength while maintaining silicon dioxide liner quality through modified plasma chemistry using sulfur-containing gases
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the deposition of conformal silicon dioxide layers with minimal thickness deviation, protecting resist features and enabling accurate pattern transfer without damaging the underlying layers, even at temperatures below 200°C, which is crucial for maintaining the structural integrity of multilayer stacks and through-silicon vias.
Implementation Method 1
depositing a silicon dioxide layer on the resist features of the patterned resist layer by: (i) placing the substrate with the patterned resist layer in a process zone; and (ii) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas
Implementation Method 2
introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas
Data Source
AI summary
A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.