Pattern Measurement Device for Beam-Angle Deviation Correction
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Solution Overview
Problem
Existing pattern measurement devices using charged particle beams face errors in center-of-gravity positional deviation measurements due to varying incident angles of the electron beam across different positions on the sample, leading to inaccurate measurements.
Innovation Solution
A pattern measurement device that calculates and corrects for positional deviations by determining the relationship between the angular deviation of the charged particle beam and the coordinates in the visual field, using a relational expression or two-dimensional map to accurately measure the center-of-gravity positional deviation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the electron beam incident angle is changed for each irradiation position to correct measurement errors, then measurement precision is improved, but device complexity increases due to the need for angular deviation calculation and correction mechanisms
Solution Approach 1:
The system pre-calculates and stores the relationship between beam incident angles and positional deviation errors in a lookup table or relational expression before actual measurement. This allows the correction data to be prepared in advance, reducing real-time computational complexity while maintaining measurement precision.
Solution Approach 2:
The invention introduces an intermediate correction mechanism that uses pre-calculated relational expressions or lookup tables to mediate between the raw measurement data and the corrected positional deviation values. This intermediary layer simplifies the complex angle-correction calculations by using pre-established relationships.
2Manufacturing precision
If the beam tilt angle is adjusted to match pattern inclination, then manufacturing precision is improved, but measurement time increases due to requiring multiple measurement steps
Solution Approach 1:
The system performs preliminary measurement of the pattern inclination angle and pre-calculates the required beam tilt correction amount before the actual precision measurement. This allows the beam tilt angle to be set in advance, reducing the time required during the main measurement process while ensuring manufacturing precision.
Solution Approach 2:
The invention implements a dynamic adjustment mechanism where the beam tilt angle is automatically adjusted based on pre-measured pattern inclination data. This dynamic adaptation allows the system to optimize measurement conditions for each specific pattern without requiring manual reconfiguration, balancing precision with efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise measurement of positional deviations between the top and bottom surfaces of patterns even when the incident angle of the charged particle beam changes, ensuring accurate feedback for process control in semiconductor manufacturing.
Implementation Method 1
a pattern measurement device that measures a size of a pattern formed on a sample by using a charged particle beam
Data Source
AI summary
The purpose of the present disclosure is to provide a pattern measurement device that can accurately measure positional deviation between a center of gravity of a top surface of a pattern and a center of gravity of a bottom surface of the pattern, even when an incidence angle of a charged particle beam varies for each irradiation position of the charged particle beam. The pattern measurement device according to the present disclosure acquires an angular deviation amount corresponding to coordinates in a visual field of a pattern in accordance with a relationship between the coordinates in the visual field of the pattern and an angular deviation amount of the charged particle beam, and acquires a positional deviation amount corresponding to the coordinates in the visual field of the pattern in accordance with a relationship between the angular deviation amount and the center of gravity positional deviation amount (see FIG. 3c).