Charged Particle Beam Apparatus Crystal Orientation Control
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Solution Overview
Problem
Current charged particle beam apparatuses face challenges in accurately and efficiently forming cross-sections of crystalline samples with specific crystal orientations, requiring repeated FIB processing and often resulting in unevenness due to the curtain effect.
Innovation Solution
A charged particle beam apparatus comprising an electron beam column, a focused ion beam column, a scattered electron detector, a crystal orientation information generation unit, an angle calculation unit, and a display unit, which allows for precise calculation and adjustment of sample stage angles to achieve the desired crystal orientation, enabling accurate and efficient cross-section formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If FIB processing is performed repeatedly while adjusting incidence angle to obtain specific crystal orientation, then crystal orientation accuracy is improved, but work load and processing time increase significantly
Solution Approach 1:
The system performs preliminary EBSD measurement to identify crystal orientation information before FIB processing. The angle calculation unit pre-calculates the optimal incidence angle based on the measured crystal orientation, allowing the operator to set the correct angle in advance and avoid repeated trial-and-error FIB processing.
Solution Approach 2:
The system uses EBSD measurement as feedback to determine crystal orientation, then calculates the appropriate incidence angle based on this feedback. This closed-loop approach ensures that the FIB processing is performed at the optimal angle from the beginning, eliminating the need for repeated adjustments.
2Measurement precision
If FIB processing is performed repeatedly while adjusting incidence angle to obtain specific crystal orientation, then crystal orientation accuracy is improved, but device complexity increases
Solution Approach 1:
The angle calculation unit acts as an intermediary that translates crystal orientation information from EBSD measurement into the optimal incidence angle for FIB processing. This intermediary component automates the complex calculation and coordination between different systems, reducing operational complexity.
3Productivity
If cross-section processing is performed without considering crystal orientation, then processing speed is improved, but curtain effect occurs causing unevenness on cross-section
Solution Approach 1:
The system performs preliminary EBSD measurement to determine crystal orientation before FIB processing. Based on this information, the optimal incidence angle is calculated and set in advance, ensuring that the cross-section is processed at the correct angle to minimize the curtain effect while maintaining efficient processing.
Solution Approach 2:
The system changes the incidence angle parameter based on crystal orientation information. By adjusting this parameter according to the measured crystal structure, the system achieves both high processing speed and excellent cross-section uniformity without the curtain effect.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables easy and accurate formation of cross-sections representing specific crystal orientations, minimizing the curtain effect and reducing the workload associated with repeated processing.
Implementation Method 1
an electron beam column configured to perform irradiation with electron beams
Implementation Method 2
a scattered electron detector configured to detect backscattered electrons which are generated from the cross-section by the irradiation with the electron beams
Implementation Method 3
a focused ion beam column configured to irradiate the sample with focused ion beams so as to form a cross-section
Data Source
AI summary
A charged particle beam apparatus includes a sample stage, a focused ion beam column, a scattered electron detector that detects backscattered electrons generated from a cross-section of a sample, a crystal orientation information generation unit that generates crystal orientation information on a predetermined region of the cross-section, and an angle calculation unit that calculates attachment angles of the sample stage, corresponding to a direction of the cross-section. In response to receiving input of information indicating that the crystal orientation information on the region displayed on a display unit is changed to aimed second crystal orientation information, the angle calculation unit calculates the attachment angles corresponding to the direction of the cross-section for generating the second crystal orientation information, and the focused ion beam column performs etching processing on the cross-section at the calculated attachment angles.