Charged Particle Beam Device Tilt Unit for Section Processing

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Solution Overview

Problem

Current charged particle beam devices face challenges in processing materials with low sputtering yield, such as ceramics and superhard materials, as they struggle to achieve accurate section processing using shielding plates, often resulting in overhang shapes and prolonged processing times due to increased ion beam scattering and formation of amorphous layers.

Innovation Solution

A charged particle beam device equipped with an ion source, a sample stand, a shielding plate, and a tilt unit that allows the sample and shielding plate to be tilted relative to the ion beam's irradiation direction, adjusting the incident angle of ions to prevent scattering and enable precise section processing by fine movement of the shielding plate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high acceleration voltage ion beams are used to process materials with low sputtering yield, then processing speed is improved, but processing position accuracy deteriorates due to increased ion beam scattering

Engineering Contradiction:
Improveprocessing speedVSAvoidprocessing position accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The invention introduces a new degree of freedom by tilting the sample in the depth direction (along the ion beam incident direction) rather than only in the horizontal direction. This vertical tilt component allows the sample surface to be oriented perpendicular to the ion beam path, preventing ion scattering into the shielding plate region and thereby maintaining processing position accuracy while using high acceleration voltage for improved processing speed

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the sample is tilted to improve processing position accuracy, then section processing precision is improved, but the complexity of the device increases

Engineering Contradiction:
Improvesection processing precisionVSAvoiddevice complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The invention makes the sample stage multi-functional by enabling it to perform both horizontal tilting (for controlling the exposed portion of the sample) and vertical tilting (for orienting the sample surface perpendicular to the ion beam). This unified sample stage design achieves improved section processing precision without requiring separate complex mechanisms, thereby limiting the increase in device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves processing position accuracy by forming a smooth sample section along the shielding plate's end surface, reducing the influence of scattered ions and achieving faster processing times with high acceleration ion beams.

Implementation Method 1

irradiates a sample with accelerated argon ions and scrapes the sample using a sputtering phenomenon in which atoms of a sample fly from the surface of the sample

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS10832889B2Charged particle beam device
Publication Date: 2020.11.10 HITACHI HIGH TECH CORP
  • US10832889B2 patent drawing
  • US10832889B2 patent drawing
  • US10832889B2 patent drawing

AI summary

A charged particle beam device that can improve machining position precision in section processing using a shielding plate is provided. The invention is directed to a charged particle beam device including: an ion source (101); a sample stand (106) on which a sample (107) is mounted; a shielding plate (108) placed so that a portion of the sample (107) is exposed when seen from the ion source (101); and tilt units (123, 124) that tilt the sample (107) and the shielding plate (108) relative to the irradiation direction of an ion beam (102) from the ion source (101) to the sample (107).