Charged Particle Beam Exposure Apparatus for Cut Patterns
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Solution Overview
Problem
Current charged particle beam exposure techniques face challenges in efficiently forming cut patterns and via-hole patterns on line patterns, particularly due to limitations in processing speed and resolution, especially when trying to achieve patterns with line widths below 10 nm.
Innovation Solution
A charged particle beam exposure apparatus that uses an array of beams, controlled by a blanker array and exposure control unit, to selectively turn charged particle beams on and off at precise positions, allowing for efficient exposure of cut and via-hole patterns on line patterns, thereby improving processing speed and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If charged particle beam exposure technique is used to achieve high resolution patterns with line width equal to or below 20 nm, then manufacturing precision is improved, but processing speed deteriorates
Solution Approach 1:
The patent divides the exposure process into two distinct stages: first, light exposure is used to form simple line-and-space patterns across the entire wafer; second, charged particle beam exposure is used only for forming cut patterns and via-hole patterns on those pre-formed lines. This segmentation allows the high-resolution requirements to be met only where necessary, while the majority of the pattern formation is handled by the faster light exposure method, thereby resolving the contradiction between achieving sub-20nm precision and maintaining high processing speed
Solution Approach 2:
The patent applies partial action by limiting the charged particle beam exposure to only the specific regions where high-resolution cut patterns and via-holes are needed, rather than exposing the entire wafer with charged particles. The blanker array selectively activates only those beams that correspond to pattern formation positions, ensuring that the slow but high-precision charged particle beam is used minimally (about several percent of total pattern area) while the fast light exposure handles the bulk of pattern formation
2Productivity
If complementary lithography is used to limit charged particle beam exposure to specific pattern areas, then processing speed is improved, but device complexity increases
Solution Approach 1:
The patent merges two different exposure techniques (light exposure and charged particle beam exposure) into a single complementary lithography system. The light exposure apparatus forms the base line-and-space patterns, while the charged particle beam apparatus with the blanker array adds the necessary cut patterns and via-holes. This merging allows the system to leverage the speed advantage of light exposure for bulk pattern formation while using charged particle beams only where their high resolution is critical, thus improving overall processing speed without requiring a complete redesign of the exposure system
Solution Approach 2:
The blanker array serves as an intermediary device that bridges the two exposure techniques. It receives the array beam from the charged particle source and selectively blocks or transmits individual beams based on the pattern requirements. This intermediary component enables precise control of where charged particle beams are applied, allowing the system to achieve high processing speeds by limiting charged particle exposure to only the necessary regions while maintaining the simplicity of using a single charged particle beam source for multiple pattern formation tasks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables efficient exposure of cut and via-hole patterns at arbitrary positions on line patterns, enhancing processing speed and resolution, while maintaining high precision and reducing the overall amount of charged particle beam irradiation required.
Implementation Method 1
a charged particle beam exposure apparatus configured to irradiate a substrate including a plurality of line patterns with a charged particle beam and to perform exposure of a pattern on the line patterns
Data Source
AI summary
There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region.