Charged Particle Beam Height Measurement via Tilted Irradiation Marks
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Solution Overview
Problem
Current methods for measuring the depth or height of miniaturized three-dimensional patterns in semiconductor manufacturing are inaccurate and time-consuming, leading to yield deterioration due to difficulties in high-accuracy measurement and the need for wafer cutting, which complicates process management in mass production.
Innovation Solution
A charged particle beam device and height measurement device that form irradiation marks at different heights on a sample using charged particle beams, allowing for accurate dimension measurement by calculating the distance between these marks and their angles, enabling precise measurement of pattern dimensions in the height direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If wafer cutting is performed to observe pattern sections, then measurement capability is improved, but productivity deteriorates due to time consumption and yield loss
Solution Approach 1:
The invention creates a virtual copy of the pattern section by using tilted imaging to generate a three-dimensional representation of the pattern surface. This virtual copy allows measurement of pattern sections without physical cutting, thereby maintaining productivity while achieving measurement capability. The tilted image processing creates a simulated cross-sectional view that contains all necessary measurement information.
2Measurement precision
If drilled volume is increased to measure deep patterns, then measurement depth capability is improved, but processing time increases and productivity deteriorates
Solution Approach 1:
The invention transitions from direct vertical measurement to tilted-angle imaging, effectively using another dimensional approach to access depth information. By tilting the imaging angle, the system can measure vertical depth characteristics through horizontal image displacement, avoiding the need for deep drilling operations and significantly reducing processing time.
3Ease of operation
If measurement reference points are not accurately ascertained, then measurement process is simplified, but measurement precision deteriorates
Solution Approach 1:
The invention enables the measurement system to automatically identify reference points through image processing algorithms that detect pattern features and calculate their positions based on tilted image geometry. The system self-determines measurement references without requiring manual intervention, thereby maintaining ease of operation while ensuring high precision through automated calculation methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-accuracy measurement of pattern dimensions in the height direction, improving process stability and reducing yield loss by avoiding wafer cutting and minimizing measurement time.
Implementation Method 1
a first charged particle beam forming unit that forms an irradiation mark of a first charged particle beam in a first height of the sample by irradiating the first height with the charged particle beams
Data Source
AI summary
The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.