Charged Particle Beam Lithography Edge Slope Optimization

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Solution Overview

Problem

Charged particle beam lithography faces challenges in achieving accurate pattern transfer due to short-range and long-range effects, leading to dimensional inaccuracies and increased complexity in reticle manufacturing, particularly when dealing with sub-wavelength features and high circuit density in integrated circuits.

Innovation Solution

The method involves generating overlapping shots with varying dosages and sizes to improve the fidelity and critical dimension variation of the pattern, using simulation to determine the optimal shot placement and dosage distribution, which can enhance edge slope and reduce backscatter effects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional charged particle beam lithography is used to transfer patterns, then the manufacturing process can be completed, but dimensional inaccuracies occur due to short-range and long-range effects

Engineering Contradiction:
Improvepattern dimensional accuracyVSAvoidpattern transfer fidelity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by pre-calculating and applying proximity effect corrections to the shot dosages before the actual pattern writing process. The system computes correction factors based on the expected backscatter and forward scatter effects, then adjusts the dosage of each shot in advance to compensate for these anticipated distortions, thereby achieving accurate pattern dimensions despite the inherent physical effects

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback through an iterative simulation and optimization process. The system simulates the charged particle beam interactions with the resist and substrate, measures the resulting pattern distortions, and uses this information to refine and adjust the shot dosages and parameters. This closed-loop approach continuously improves pattern accuracy by learning from simulated or measured outcomes

Inventive Principle:
Principle #23Feedback

2Manufacturing precision

If overlapping shots with varying dosages are used to improve pattern accuracy, then manufacturing precision improves, but device complexity increases

Engineering Contradiction:
Improvecritical dimension variationVSAvoidshot pattern complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality by assigning different dosages and parameters to different shots based on their specific location and role in the pattern. Rather than using a uniform approach, the system tailors each shot's characteristics (dosage, size, overlap) to its local requirements, with shots in different regions having optimized parameters to achieve the desired pattern fidelity while managing overall complexity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs parameter changes by systematically varying shot dosages, sizes, and overlap parameters to optimize pattern formation. The system adjusts these parameters based on the local pattern geometry, material properties, and expected scattering effects, transforming a complex multi-parameter optimization problem into a manageable process through simulation-guided parameter selection

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If higher dosages are applied to improve edge slope, then pattern definition improves, but backscatter effects increase causing more dimensional inaccuracies

Engineering Contradiction:
Improveedge slopeVSAvoidbackscatter effects
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies parameter changes by optimizing the shot dosage and size parameters to achieve the desired edge slope while minimizing backscatter. The system simulates different dosage scenarios and selects parameters that produce sharp edges without excessive backscatter, rather than simply increasing dosage uniformly

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent converts the harmful backscatter effect into a beneficial tool by deliberately using overlapping shots where the backscatter from one shot contributes to the proper exposure of adjacent regions. The system calculates and exploits these interactions to achieve uniform pattern formation, turning what would normally be a source of distortion into a mechanism for improving pattern fidelity

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the accuracy and edge slope of the pattern transferred to the surface, reducing critical dimension variation and manufacturing errors, while maintaining or reducing the overall writing time and cost.

Implementation Method 1

charged particle beam lithography is used to transfer patterns to a substrate

Methodology Applied
Scientific EffectCharged particle beam exposure: Electron Beam

Implementation Method 2

expose a resist-coated surface with these simple shapes

Methodology Applied
Scientific EffectResist exposure: Photopolymerisation

Implementation Method 3

overlapping shots are generated to increase dosage in selected portions of a pattern

Methodology Applied
Scientific EffectEnergy deposition: Joule Heating

Implementation Method 4

reduce backscatter effects

Methodology Applied
Scientific EffectBackscatter: Scattering

Implementation Method 5

short-range and long-range effects

Methodology Applied
Scientific EffectForward scatter: Diffusion

Data Source

PatentUS9057956B2Method and system for design of enhanced edge slope patterns for charged particle beam lithography
Publication Date: 2015.06.16 D2S INC
  • US9057956B2 patent drawing
  • US9057956B2 patent drawing
  • US9057956B2 patent drawing

AI summary

A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.