Charged Particle Beam Lithography Grid Matching
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Solution Overview
Problem
The miniaturization of semiconductor circuit patterns is hindered by electrostatic charging and subsequent beam shot position deviations during electron beam lithography, which traditional methods fail to adequately address.
Innovation Solution
A charged particle beam pattern writing apparatus and method that calculates and corrects for electric field intensities across mesh-shaped cell regions to adjust the beam irradiation position, using an electric field intensity calculator, correction amount calculator, and deflection control unit to compensate for electrostatic charging effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electron beam lithography is used for pattern miniaturization, then image resolution is improved, but beam shot position deviation occurs due to electrostatic charging
Solution Approach 1:
The system performs preliminary actions by calculating electric field intensities and determining correction amounts for beam shot position deviations before actual pattern writing. The correction amount map is prepared in advance based on simulated electric field distributions, allowing the beam position to be pre-compensated for electrostatic charging effects that will occur during irradiation.
Solution Approach 2:
The system implements feedback by using the calculated electric field intensity information to generate correction amounts that are applied to adjust beam shot positions. The correction amount map serves as a feedback mechanism that compensates for the electrostatic charging effects, creating a closed-loop system where the beam position is continuously adjusted based on predicted charging conditions.
2Productivity
If conventional variable-shaped EB lithography is used, then pattern writing is performed, but beam shot position deviation is not corrected due to electrostatic charging
Solution Approach 1:
The system introduces an intermediary correction amount map that mediates between the pattern writing process and the electrostatic charging effects. This map contains pre-calculated correction values that are applied to the beam shot positions, serving as an intermediary layer that compensates for charging-induced deviations without interrupting the pattern writing workflow.
Solution Approach 2:
The system changes parameters by calculating and applying correction amounts to beam shot positions based on electric field intensity distributions. The correction amounts modify the original beam positioning parameters, adjusting them to compensate for electrostatic charging effects and maintain accurate pattern formation.
3Ease of manufacture
If electrostatic charging is not addressed, then pattern writing proceeds without correction, but beam shot position deviation increases with miniaturization
Solution Approach 1:
The system segments the pattern writing area into multiple cell regions and calculates electric field intensities and correction amounts for each cell individually. This segmentation allows for localized correction of beam shot positions, enabling precise compensation for electrostatic charging effects in each region while maintaining overall pattern writing simplicity through automated processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively corrects beam shot position deviations due to electrostatic charging, enabling precise pattern writing and maintaining high accuracy in miniaturized feature sizes by accurately calculating and applying correction amounts to the beam's deflection position.
Implementation Method 1
the workpiece can be electrostatically charged or electrified at a presently pattern-writing position and its nearby positions under the influence of the past irradiated electron beam
Implementation Method 2
calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region
Implementation Method 3
irradiate based on the correction amount the charged particle beam to another region to thereby perform pattern drawing in another region
Data Source
AI summary
A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.