Charged Particle Beam Lithography Superimposing Multiple Patterns
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Solution Overview
Problem
The resolution of charged particle beams in electron beam lithography varies significantly due to differences in beam current density and between different lithography apparatuses, leading to inconsistent pattern formation and the need for re-optimization of post-process parameters.
Innovation Solution
A method and apparatus that form a shape identical to a first figure pattern using a first charged particle beam by superimposing or adjacently arranging multiple second figure patterns with different widths, obtained using a second charged particle beam with a higher resolution, allowing for consistent pattern formation across varying beam current conditions and apparatuses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If beam current density is increased to increase throughput, then productivity is improved, but beam resolution deteriorates due to increased Coulomb effect
Solution Approach 1:
The patent segments the writing process into multiple passes, dividing a single high-current writing operation into multiple lower-current passes. This allows the total dose to be accumulated while maintaining lower beam current during each individual pass, thereby reducing the Coulomb effect and preserving beam resolution while still achieving the required throughput.
2Manufacturing precision
If beam current is decreased to improve resolution by reducing Coulomb effect, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent maintains continuous writing action by performing multiple passes over the same region, ensuring that the useful action of pattern formation continues without interruption. The cumulative effect of multiple passes at lower current achieves the same total exposure as a single high-current pass, maintaining productivity while improving resolution.
3Device complexity
If a single beam resolution is used for writing, then device complexity is reduced, but adaptability decreases when writing patterns for different resolutions on the same apparatus
Solution Approach 1:
The patent introduces dynamic control of beam parameters by varying beam current and writing conditions based on the specific pattern requirements. The system can dynamically adjust between different effective resolutions by modifying writing parameters such as beam current, focus, and writing speed, allowing a single apparatus to adapt to different pattern resolution requirements without physical reconfiguration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables consistent pattern formation and eliminates the need for re-optimization of post-process parameters by using multiple beams with different resolutions, achieving identical resolution performance across different beam current conditions and lithography apparatuses.
Implementation Method 1
beam current becomes small, and influence of Coulomb effect becomes small to improve resolution. On the other hand, when the current density is high, influence of Coulomb effect becomes large to deteriorate the resolution.
Data Source
AI summary
According to one aspect of the present invention, a charged particle beam lithography method includes forming, such that a shape identical to a first figure pattern obtained using a first charged particle beam having a first resolution can be obtained by superimposing a plurality of second figure patterns, said plurality of second figure patterns that have different widths and are obtained by using a second charged particle beam having a second resolution higher than the first resolution; and performing multiple writing of the plurality of second figure patterns, which are stacked, by using the second charged particle beam.