Charged-Particle Beam Profiling With Standing Optical Waves
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Solution Overview
Problem
Current electron beam profiling methods in scanning electron microscopes face limitations in achieving high imaging resolution due to beam-sample interaction, which can cause charging or damage to the sample, and existing detectors have inadequate spatial resolution for small beam sizes, leading to inaccurate measurements and reduced throughput.
Innovation Solution
The method involves modifying the electron beam by adjusting its interaction with a standing optical wave, using an optical source to generate the wave in a plane perpendicular to the primary optical axis, and detecting the modified beam with a charged-particle detector to determine its profile, allowing for magnification or truncation of the beam without sample interaction, thus overcoming resolution limitations and interference issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electron beam profiling is performed using conventional methods with direct beam-sample interaction, then the beam profile can be measured, but the sample may suffer from charging or damage, and the measurement accuracy is limited
Solution Approach 1:
The patent introduces an optical beam as an intermediary mediator between the electron beam and the sample. The optical beam interacts with the electron beam to modulate it, allowing the electron beam profile to be measured without direct interaction with the sample. This intermediary approach enables accurate beam profiling while preventing sample charging and damage by eliminating direct electron-sample interaction during measurement.
Solution Approach 2:
The patent replaces the conventional direct electron beam measurement method with an optical-based measurement system. By using optical beams to probe and modulate the electron beam, the system substitutes mechanical/electrical direct interaction with optical field interaction, enabling non-invasive beam profiling that preserves sample integrity while maintaining measurement precision.
2Manufacturing precision
If the electron beam size is reduced to improve imaging resolution, then higher resolution imaging is achieved, but the spatial resolution of existing detectors becomes inadequate for accurate measurement
Solution Approach 1:
The patent transitions the measurement from direct spatial detection in the electron beam domain to optical frequency domain detection. By using optical beams with much smaller effective wavelengths to probe the electron beam, the system achieves indirect measurement of sub-micron beam sizes through optical interference and diffraction patterns, overcoming the spatial resolution limits of conventional electron detectors.
Solution Approach 2:
The optical beam serves as a high-resolution intermediary probe that can resolve fine electron beam structures. The optical beam's interaction with the electron beam creates measurable optical signals that encode information about the electron beam profile, enabling accurate measurement of small beam sizes that would be undetectable by conventional electron detectors.
3Measurement precision
If conventional beam profiling methods are used, then the beam profile can be obtained, but the throughput and inspection efficiency are reduced
Solution Approach 1:
The patent enables continuous beam profiling by using optical beams that can interact with the electron beam without interrupting the electron beam flow or requiring sample manipulation. The optical probing occurs continuously as the electron beam passes through, allowing real-time beam characterization that maintains high inspection throughput while providing accurate beam profile data for quality control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the accuracy and reliability of electron beam profiling, achieving higher measurement accuracy, eliminating sample-induced errors, and increasing inspection throughput while maintaining high resolution imaging.
Implementation Method 1
modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave
Data Source
AI summary
Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.