Charged Particle Beam Scanning Lines for Low-Charging Channel Imaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Charging effects and limited throughput hinder accurate imaging of semiconductor structures, particularly in 3D architectures, due to charge accumulation at interfaces between channels and substrates, affecting the precision and efficiency of charged particle imaging systems.
Innovation Solution
Control the scanning lines of the focused charged particle beam to cross the interface between semiconductor surface and channels at an angle greater than or equal to 45°, minimizing charging along channel edges and distributing charge spatially and temporally to allow dissipation, while avoiding areas with irrelevant information.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the charged particle beam scans along the interface between channels and substrate, then the interface can be imaged, but charge accumulation occurs causing beam deflection and reduced imaging accuracy
Solution Approach 1:
Instead of scanning along the interface (parallel to it), the patent inverts the scanning approach by crossing the interface at a significant angle (≥45°). This angular crossing prevents the beam from traveling along the interface where charge would accumulate, thereby eliminating the harmful charging effect while still capturing interface information during the crossing trajectory.
Solution Approach 2:
The patent dynamically adjusts the scanning trajectory to adapt to the local geometry of channel interfaces. By calculating the orientation of each interface and determining the optimal crossing angle, the system dynamically modifies the beam path to maintain the ≥45° crossing condition, preventing charge accumulation while ensuring complete interface coverage.
2Area of stationary object
If the beam scans all areas including irrelevant regions, then complete coverage is achieved, but acquisition time increases reducing throughput
Solution Approach 1:
The patent applies local quality by differentiating between relevant and irrelevant scanning areas. Instead of uniformly scanning the entire field of view, the system identifies and prioritizes scanning along channel interfaces and relevant structural features, while reducing or skipping scans in irrelevant regions. This localized scanning strategy maintains necessary coverage while significantly reducing acquisition time.
Solution Approach 2:
The patent implements partial action by scanning only the necessary portions of the sample that contain relevant information. Rather than performing exhaustive scans of all areas, the system selectively scans regions containing channel interfaces and structural features of interest, achieving sufficient imaging coverage without the time penalty of complete area scanning.
3Measurement precision
If the beam crosses interfaces at shallow angles, then interface resolution may be improved, but charge accumulation increases causing beam deflection
Solution Approach 1:
The patent changes the critical parameter of scanning angle from shallow (parallel) to steep (≥45° crossing). This parameter change fundamentally alters the interaction between the beam and the interface, preventing charge accumulation by avoiding parallel travel along the interface while still achieving adequate resolution through the crossing trajectory. The angle parameter is explicitly constrained to maintain this balance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances imaging accuracy and significantly reduces acquisition time, improving throughput by minimizing charge-related deflections and reducing the time spent on irrelevant imaging, thus optimizing the image generation process.
Implementation Method 1
a focused charged particle beam hitting the surface of the semiconductor sample along scanning lines
Implementation Method 2
distributing charge spatially and temporally to allow dissipation, while avoiding areas with irrelevant information
Data Source
AI summary
A method of generating an image of a region of a semiconductor sample including a plurality of channels extending substantially perpendicular to a sample surface of the semiconductor sample based on a focused charged particle beam hitting a surface of the semiconductor sample along scanning lines, the method comprising at a charged particle beam imaging system the step of controlling the scanning lines of the focused charged particle beam in such a way that the scanning lines cross an interface between the semiconductor surface and each of the channels only with an angle greater or equal to 45°. The image is generated based on the scanning lines.