Beam Spatial Dimension Configuration for Lithography Scanning
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Solution Overview
Problem
Current lithographic technologies face challenges in achieving high resolution and accuracy in pattern exposure due to limitations in beam size and shape, which affect correction resolution and pattern reproduction, especially at low k1 values, leading to issues with alignment, overlay, critical dimension, dose, and focus.
Innovation Solution
A method and apparatus for configuring the scanning of a beam of photons or particles across a patterning device, where the spatial resolution of a patterning correction is determined to improve exposure quality, and the spatial dimension of the beam is adjusted based on this resolution, using a slit length that is indirectly proportional to the spatial resolution, with a slit length and resolution relationship of S2+C2≤1.1C2, to achieve precise corrections during scanning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the beam size is increased to cover more of the patterning device, then the exposure area is improved, but the spatial resolution of patterning correction deteriorates
Solution Approach 1:
The beam is divided into multiple segments along the scanning direction, with each segment corresponding to a specific spatial region on the patterning device. This segmentation allows independent control of beam dimensions for each region, enabling high spatial resolution correction in specific areas while maintaining overall coverage of the patterning device.
Solution Approach 2:
The beam configuration is optimized locally for different regions of the patterning device. The spatial dimension of the beam is adjusted according to the specific correction requirements of each local area, allowing high resolution where needed while maintaining adequate coverage across the entire device.
2Manufacturing precision
If the beam spatial dimension is decreased to improve correction resolution, then the patterning correction accuracy is improved, but the exposure area coverage deteriorates
Solution Approach 1:
The beam spatial dimension is made dynamic and adjustable during the scanning process. The beam configuration can be changed in real-time to match the specific correction requirements of different spatial regions, allowing the system to adapt between high resolution and broad coverage as needed.
Solution Approach 2:
The problem is solved by introducing the scanning dimension. Instead of attempting to cover the entire patterning device with a single large beam, the system uses a smaller beam that scans across the device, achieving both high spatial resolution and complete coverage through temporal sequencing.
3Device complexity
If a fixed beam configuration is used, then the system complexity is reduced, but the ability to apply sophisticated patterning corrections deteriorates
Solution Approach 1:
The optimal beam spatial dimensions are predetermined based on the spatial resolution requirements of the patterning correction. This preliminary configuration allows the system to achieve high correction precision without requiring complex real-time adjustments, as the beam parameters are optimized in advance for specific correction scenarios.
Data Source
AI summary
A method of configuring a step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, wherein the method includes determining a spatial resolution of a patterning correction configured to improve quality of the exposing, and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.