Charged Particle Beam Static Charge Measurement via Mirror Reflection

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Solution Overview

Problem

Existing scanning electron beam devices face challenges in accurately measuring samples due to static charges caused by primary charged particle beam irradiation, leading to focusing errors and astigmatisms, which are exacerbated as sample sizes decrease, making it difficult to obtain accurate secondary or reflected electron distribution data.

Innovation Solution

The method involves adjusting the primary charged particle beam to a 'mirror reflection state' where it does not reach the sample surface, allowing for the estimation of localized voltage by analyzing the returned beam, thereby minimizing secondary static charge induction and compensating for beam deviations caused by static charges.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the primary charged particle beam irradiates the sample to measure static charge, then static charge quantity can be estimated, but secondary static charge is induced on the sample surface

Engineering Contradiction:
Improvestatic charge measurement accuracyVSAvoidsecondary static charge induction
Core Design Contradiction:
Measurement precisionVSObject-generated harmful factors

Solution Approach 1:

The patent introduces a retarding voltage as an intermediary mechanism between the charged particle beam and the sample. By applying retarding voltage to the sample, the primary beam is repelled before reaching the sample surface, acting as a mediator that enables voltage measurement without direct beam-sample contact that would cause secondary charging

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies retarding voltage to the sample before the primary charged particle beam reaches it. This preliminary application of voltage creates a repulsive field that prevents the beam from contacting the sample surface, thereby measuring the static charge state without inducing additional secondary charges

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If the primary charged particle beam reaches the sample surface, then secondary electron or reflected electron distribution data can be obtained, but focusing errors and astigmatisms occur due to static charge

Engineering Contradiction:
Improveelectron distribution data accuracyVSAvoidbeam track stability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent employs a feedback mechanism where the static charge voltage measured through the retarding voltage method is used to adjust and compensate for beam focusing and tracking. The measured voltage information feeds back to correct the beam path and focusing parameters, maintaining reliable beam performance despite the presence of static charges on the sample

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables more accurate measurement of localized voltage and reduces the impact of static charges on the charged particle optical system, improving measurement precision and reducing secondary static charge effects, allowing for accurate surface voltage estimation and compensation.

Implementation Method 1

a retarding voltage Vr is applied to a sample 10 and the primary charged particle beam is made to reflect in a mirror state by the retarding voltage

Methodology Applied
Scientific EffectElectrostatic repulsion: Electrostatics

Data Source

PatentUS7928384B2Localized static charge distribution precision measurement method and device
Publication Date: 2011.04.19 HITACHI HIGH TECH CORP
  • US7928384B2 patent drawing
  • US7928384B2 patent drawing
  • US7928384B2 patent drawing

AI summary

A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.