Charged Particle Beam Writing Pattern Density Resizing

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Solution Overview

Problem

In electron beam writing for semiconductor manufacturing, pattern dimension fluctuations occur due to focal positional deviations and proximity effects, leading to inaccuracies in circuit pattern formation, despite efforts to correct these issues through dose adjustments.

Innovation Solution

A method involving the virtual division of the writing area into small mesh-like areas, calculating pattern density and resizing dimensions based on correlation data to apply an isofocal dose, ensuring precise pattern writing by resizing the design pattern dimensions in each area to compensate for focal positional errors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the writing area is divided into small mesh-like areas for localized correction, then pattern writing precision is improved, but calculation complexity and processing time increase

Engineering Contradiction:
Improvepattern writing precisionVSAvoidcalculation complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The writing area is divided into small mesh-like areas to enable localized precision correction. The patent manages the associated calculation complexity by efficiently computing pattern density and isofocal dose values for each region, balancing precision improvement with computational feasibility.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS7495243B2Writing method of charged particle beam, support apparatus of charged particle beam writing apparatus, writing data generating method and program-recorded readable recording medium
Publication Date: 2009.02.24 NUFLARE TECH INC
  • US7495243B2 patent drawing
  • US7495243B2 patent drawing
  • US7495243B2 patent drawing

AI summary

A charged particle beam writing method includes inputting design pattern data, virtually dividing a writing area to be written with the design pattern data into a plurality of small areas in a mesh-like manner, calculating a pattern density in each of the plurality of small areas based on the design pattern data, calculating a resizing amount for each pattern density in a case of irradiating a charged particle beam at an isofocal dose, resizing a dimension of the design pattern data in each of the plurality of small areas, based on the resizing amount in each of the plurality of small areas, and writing a resized design pattern on a target workpiece with the isofocal dose corresponding to the pattern density which was calculated before the resizing in each of the plurality of small areas.