Ribbon Beam Angle Correction for Parallel Beamlets in Ion Implantation
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Solution Overview
Problem
Conventional ion implantation systems lack efficient and accurate techniques for adjusting the ribbon beam angles, which is crucial for ensuring that all beamlets hit the wafer correctly and implant the required ions, leading to potential contamination and misimplantation issues.
Innovation Solution
The system employs dipole magnets with adjustable magnetic fields, applied at various locations along the ribbon beam path, to correct the ribbon beam angles by applying specific currents to coils, ensuring that adjacent beamlets become parallel and maintain precise control throughout the ion implantation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional ion implantation systems are used without ribbon beam angle adjustment, then the system structure remains simple, but the manufacturing precision and reliability of ion implantation deteriorate due to beamlets missing the wafer or causing contamination
Solution Approach 1:
A dipole magnet is introduced as an intermediary component between the ion source and wafer chuck to adjust the ribbon beam angle. The dipole magnet includes at least two coils that generate magnetic fields to deflect the ion beam, enabling precise angle control without complex mechanical adjustment mechanisms. This mediator allows the beam angle to be controlled through electromagnetic fields rather than mechanical means.
Solution Approach 2:
The system adjusts the ribbon beam angle by changing the current parameters applied to the dipole magnet coils. By varying the current magnitude and direction in the coils, the magnetic field strength changes, which in turn changes the deflection angle of the ribbon beam. This parameter-based control enables continuous and precise angle adjustment without mechanical movement.
2Reliability
If ribbon beam angle is not adjusted, then the device complexity remains low, but the purity of ion implantation deteriorates due to contamination from misplaced beamlets
Solution Approach 1:
The dipole magnet serves as an intermediary control element that reliably adjusts the ribbon beam angle to ensure all beamlets hit the wafer correctly. By positioning the dipole magnet in the beam path and controlling its magnetic field, the system achieves reliable beam placement without requiring complex mechanical positioning systems or multiple adjustment mechanisms.
Solution Approach 2:
The patent replaces potential mechanical adjustment mechanisms with an electromagnetic field-based dipole magnet system. Instead of using mechanical lenses, mirrors, or movable components to control beam angle, the system uses magnetic fields generated by the dipole magnet coils to deflect and control the ion beam, eliminating the need for complex mechanical adjustment systems.
3Manufacturing precision
If dipole magnet with multiple coils is used to adjust ribbon beam angle, then the manufacturing precision improves, but the device complexity and energy consumption increase
Solution Approach 1:
The dipole magnet employs at least two coils positioned to create localized magnetic fields in specific regions of the beam path. Each coil can be independently controlled to adjust the magnetic field strength in its local region, enabling precise control of the ribbon beam angle by applying current only where needed rather than requiring uniform high current throughout the entire system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for precise adjustment of ribbon beam angles, reducing contamination and ensuring accurate ion implantation by maintaining beamlet parallelism, thereby enhancing the ion implantation process's efficacy and reducing the risk of beamlets interacting with unwanted components.
Implementation Method 1
a dipole magnet including at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck
Implementation Method 2
a first current is applied to a first coil of the at least two coils and a second current is applied to a second coil of the at least two coils
Data Source
AI summary
The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.