Boiling Enhanced Layer Metallization for Low-Warpage IC Cooling

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing IC devices face challenges with heat dissipation due to the use of thermal interface materials and metallic lid structures, which introduce additional thermal resistance and can cause substrate warpage, affecting performance and lifespan.

Innovation Solution

A direct boiling enhanced layer (BEL) is implemented directly on the substrate without a thermal interface material or metallic lid, configured as discrete islands aligned with thermal hot spots to facilitate efficient heat dissipation through vapor formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a thermal interface material and metallic lid structure are used to attach the BEL to IC devices, then the BEL can be securely attached to facilitate heat removal, but additional thermal resistance is introduced

Engineering Contradiction:
Improveattachment reliabilityVSAvoidthermal resistance
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent removes the thermal interface material and metallic lid structure from the attachment system, achieving direct attachment of the BEL to the IC device. This extraction of intermediate components eliminates the additional thermal resistance they introduced while maintaining secure attachment through the simplified direct contact structure.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If the BEL is implemented with traditional attachment methods, then heat removal can be facilitated, but excessive IC device warpage occurs

Engineering Contradiction:
Improveheat removal capabilityVSAvoidsubstrate warpage
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

By removing the metallic lid structure and thermal interface material, the patent eliminates the sources of excessive warpage while preserving the heat removal function through direct BEL attachment to the IC device, allowing the substrate to maintain its structural integrity.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If a thermal interface material and metallic lid structure are used, then the BEL can be attached to IC devices, but the device complexity increases

Engineering Contradiction:
Improveattachment capabilityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent simplifies the device structure by extracting and removing the thermal interface material and metallic lid structure, reducing the number of components and assembly steps while maintaining the essential attachment capability through direct BEL-to-IC-device contact.

Inventive Principle:
Principle #2Taking out (Extraction)

4Reliability

If traditional attachment methods with multiple layers are used, then the BEL can be securely mounted, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvemounting securityVSAvoidalignment precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

By eliminating the multiple intermediate layers of thermal interface material and metallic lid structure, the patent reduces the number of alignment interfaces that must be precisely matched during manufacturing, thereby lowering the overall manufacturing precision requirements while maintaining secure mounting through direct attachment.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces overall thermal resistance, improves heat dissipation, minimizes substrate warpage, and extends the lifespan of IC devices by allowing faster and more efficient cooling.

Implementation Method 1

facilitate efficient heat dissipation through vapor formation

Methodology Applied
Scientific EffectBoiling: Boiling

Data Source

PatentUS20250226216A1Metallization structure for coupling boiling enhanced layer to substrate in a cooling system
Publication Date: 2025.07.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250226216A1 patent drawing
  • US20250226216A1 patent drawing
  • US20250226216A1 patent drawing

AI summary

A metallization structure is formed over an integrated circuit (IC) substrate from a first side. A patterning process is performed to the metallization structure from the first side. The metallization structure is patterned into a plurality of metallization islands by the patterning process. A plurality of metal-containing structures is formed over the plurality of the metallization islands, respectively, from the first side. A second side of the IC substrate is coupled to an organic substrate. The second side is opposite the first side.