Bending Bonding Tool for Void-Free Die-to-Wafer Bonding
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Solution Overview
Problem
Challenges exist in stacking semiconductor devices and reducing manufacturing costs, particularly in achieving precise alignment and avoiding voids or gaps during die-to-wafer bonding, which can lead to bonding failures.
Innovation Solution
A bonding tool and method that uses a bending member to deflect and deform a semiconductor die, allowing initial contact at the center area with the wafer, ensuring uniform bonding pressure distribution and preventing voids or gas pockets by propagating the bond wave outwardly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods are used to bond semiconductor die to wafer, then bonding can be achieved, but voids or gas pockets may form at the bonding interface leading to bonding failures
Solution Approach 1:
The bonding tool performs preliminary actions by deflecting the die toward the wafer before full bonding contact is made. This preliminary deflection ensures proper alignment and initiates bonding at the center area, preventing void formation from the outset rather than attempting to correct it afterward.
Solution Approach 2:
The invention applies local quality by creating a bond wave that propagates outwardly from the center area of the die to the peripheral area. This localized bonding approach ensures that each region bonds in sequence with appropriate pressure, eliminating voids that would form with uniform simultaneous bonding.
2Manufacturing precision
If uniform bonding pressure is applied across the entire die surface, then bonding can be achieved, but voids or gas pockets may still form at the bonding interface
Solution Approach 1:
The bonding tool deflects the die toward the wafer before full contact, preliminarily establishing center-area bonding. This preliminary action creates a nucleation point for the bond wave, ensuring subsequent uniform pressure distribution as bonding propagates outward.
Solution Approach 2:
The invention changes the pressure application parameter by using a bond wave propagation mechanism rather than uniform simultaneous pressure. The pressure is applied dynamically, starting at the center and propagating outward, which prevents void formation while maintaining bonding uniformity.
3Reliability
If the bonding tool applies pressure to bond the die to the wafer, then bonding can be achieved, but non-uniform pressure distribution may cause bonding failures
Solution Approach 1:
The bonding tool changes the pressure application parameter from static uniform pressure to dynamic propagating pressure. The bond wave propagates outwardly from the center area, creating a time-dependent pressure distribution that ensures uniform bonding across the interface while maintaining reliability.
Solution Approach 2:
The bonding process uses periodic action through the bond wave propagation. The pressure is applied in a sequential wave pattern that moves from the center area to the peripheral area, creating periodic compression that ensures uniform bonding without void formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures uniform bonding pressure and avoids voids or gas pockets, enhancing the bonding performance and reducing the likelihood of failures.
Implementation Method 1
uses a bending member to deflect and deform a semiconductor die
Implementation Method 2
ensuring uniform bonding pressure distribution and preventing voids or gas pockets by propagating the bond wave outwardly
Data Source
AI summary
A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.