Bent-bridge silicon interconnect for compact semiconductor packaging
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Solution Overview
Problem
Package miniaturization in semiconductor devices poses challenges in achieving high-speed interconnections between devices due to the need for small footprint and thin-profile form factors, which complicates the integration of semiconductive components.
Innovation Solution
A bent-bridge semiconductive apparatus is developed, where a silicon bridge is integral to the processed die and bent out of planarity, allowing for efficient metallization and redistribution layers to facilitate high-speed interconnections between semiconductive devices, enabling the formation of a compact and functional semiconductor package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If package miniaturization is implemented to achieve small footprint and thin-profile form factors, then device integration density is improved, but high-speed interconnections between devices become challenging
Solution Approach 1:
The patent transitions from planar (2D) interconnections to three-dimensional (3D) bent-bridge structures. The bent bridge extends vertically out of the substrate plane, creating a three-dimensional pathway for signal transmission. This dimensional change allows high-speed interconnections to be achieved within a minimized footprint area, as the signal path utilizes the vertical dimension rather than requiring additional lateral space.
Solution Approach 2:
The bent bridge structure is integrated within the substrate itself, with the bridge nested between conductive layers and surrounded by dielectric material. The conductive interconnects are embedded within the bent bridge structure, creating a nested configuration where multiple functional elements are contained within a compact volume, enabling high-speed signaling without increasing the overall package footprint.
2Ease of manufacture
If planar substrate structure is used for simplicity of fabrication, then manufacturing ease is improved, but integration density and interconnection efficiency deteriorate
Solution Approach 1:
The substrate is segmented into distinct functional regions including the bent bridge portion, conductive layers, dielectric material, and support structures. This segmentation allows each component to be fabricated and optimized independently using standard semiconductor processing techniques, maintaining manufacturing ease while enabling complex three-dimensional integration for high productivity.
Solution Approach 2:
The bridge structure is formed with a bent or curved geometry rather than a straight planar configuration. This curvature is achieved through controlled fabrication processes that deposit and pattern conductive material in an arched shape, allowing the bridge to extend vertically for improved integration density while being manufactured using conventional layer-by-layer deposition and etching techniques.
Data Source
AI summary
A bent-bridge semiconductive apparatus includes a silicon bridge that is integral to a semiconductive device and the silicon bridge is deflected out of planarity. The silicon bridge may couple two semiconductive devices, all of which are from an integral processed die.