Bent Channel Semiconductor Aperture Ratio

The patent applies dimensionality change by bending the channel region in the semiconductor layer to overlap with the gate electrode in the vertical direction. This three-dimensional configuration allows the channel region to occupy space above the gate electrode, effectively increasing the aperture ratio without adding complex wiring layouts in the planar direction. The stacked structure of insulating layers and transparent conductive layers further utilizes vertical space to maintain electrical isolation while improving optical performance.

The patent uses insulating layers as intermediaries between the channel region and the gate electrode. Specifically, the first insulating layer is positioned between the channel region and the gate electrode, and the second insulating layer is positioned between the gate electrode and the transparent conductive layers. These insulating layers act as mediators that maintain electrical isolation even when the channel region bends to overlap with the gate electrode vertically, thereby preventing electrical short-circuits while enabling improved aperture ratio and display resolution.

The patent segments the transparent conductive structure into multiple distinct layers: a first transparent conductive layer forming the pixel electrode, and a second transparent conductive layer forming the common electrode. Each layer is separated by insulating layers and positioned at different vertical heights. This segmentation allows for independent optimization and fabrication of each conductive layer, reducing the overall manufacturing precision requirements compared to a single integrated transparent conductive structure, while still achieving high light transmission through the stacked configuration.