Bent Polyimide Tape Isolation for High-Voltage Semiconductor Packages

Solution Overview

Problem

Semiconductor devices face issues with high electric field strengths due to voltage differences between device components, leading to potential wear and failure, and existing manufacturing methods are not cost-effective or efficient in providing reliable electrical isolation.

Innovation Solution

A semiconductor device design that includes an electrically conductive carrier, a semiconductor chip, and a dielectric material with a polyimide tape that has an edge region bent away from the carrier section, providing galvanic isolation and increased electrical isolation through the bent shape and encapsulation material.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a dielectric material is used to galvanically isolate the carrier section and semiconductor chip, then electrical isolation is improved, but high electric field strengths still occur in specific spatial regions leading to device wear and potential failure

Engineering Contradiction:

Improveelectrical isolationVSAvoidelectric field strength

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The polyimide tape is bent along its entire length to form an arc-shaped configuration between the carrier section and semiconductor chip. This curvature redistributes the electric field distribution, preventing concentration at sharp edges and reducing peak electric field strengths while maintaining galvanic isolation.

Inventive Principle:

Principle #14Spheroidality (Curvature)

Solution Approach 2:

The polyimide tape is bent in the vertical dimension (z-direction) to create a three-dimensional arc shape rather than a flat configuration. This dimensional change increases the isolation distance and alters the electric field path, reducing field strength in critical regions while maintaining electrical isolation.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Ease of manufacture

If conventional flat polyimide tape is used for galvanic isolation, then manufacturing is simple, but electrical isolation effectiveness is reduced due to high electric field strengths

Engineering Contradiction:

Improvemanufacturing simplicityVSAvoidelectrical isolation effectiveness

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The polyimide tape is bent along its entire length to form an arc-shaped configuration between the carrier section and semiconductor chip. This curvature redistributes the electric field distribution, preventing concentration at sharp edges and reducing peak electric field strengths while maintaining galvanic isolation.

Inventive Principle:

Principle #14Spheroidality (Curvature)

3Reliability

If the polyimide tape edge region is bent away from the carrier section, then electrical isolation and device lifespan are improved, but manufacturing complexity increases

Engineering Contradiction:

Improvedevice lifespanVSAvoidpolyimide tape configuration

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The polyimide tape is bent along its entire length to form an arc-shaped configuration between the carrier section and semiconductor chip. This curvature redistributes the electric field distribution, preventing concentration at sharp edges and reducing peak electric field strengths while maintaining galvanic isolation.

Inventive Principle:

Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of bent polyimide tape in semiconductor devices enhances electrical isolation, reduces the risk of electrical breakdowns and treeing, and extends the lifespan of the devices while providing cost-effective manufacturing methods.

Implementation Method 1

The dielectric material galvanically isolates the carrier section and the semiconductor chip from one another

Methodology Applied

Scientific EffectGalvanic isolation: Electrical Resistance

Implementation Method 2

an edge region of the polyimide tape is bent away from the carrier section... increased voltage differences may lead to enormously high electric field strengths in specific spatial regions of the device

Methodology Applied

Scientific EffectElectric field distribution: Electric Field

Data Source

PatentUS20250191959A1Semiconductor devices with bent polyimide tape and associated manufacturing methods

Publication Date: 2025.06.12 INFINEON TECHNOLOGIES AG

AI summary

A semiconductor device includes an electrically conductive carrier, a semiconductor chip arranged over a section of the carrier, and a dielectric material arranged between the carrier section and the semiconductor chip. The dielectric material galvanically isolates the carrier section and the semiconductor chip from one another. The dielectric material includes a polyimide tape, wherein an edge region of the polyimide tape is bent away from the carrier section.