Display Device Bent Scan-Line Layout for Compact Capacitors

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Solution Overview

Problem

Existing display devices experience luminance deviation and require a significant area for capacitors, hindering high resolution performance.

Innovation Solution

The display device design includes a substrate with specific transistor configurations and capacitors, featuring a second scan line with unique directional bends and overlapping structures to minimize capacitor area and reduce luminance deviation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a conventional capacitor layout is used in display devices, then the capacitor can store necessary charge, but the capacitor occupies a large area which hinders high resolution performance

Engineering Contradiction:
Improvecapacitor areaVSAvoidluminance uniformity
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The scan line is designed with bent portions instead of straight lines. Specifically, the scan line includes a first portion extending in a first direction, a second portion bent from the first portion and extending in a second direction, and a third portion bent from the second portion and extending in the first direction. This curved layout reduces the area occupied by the capacitor while maintaining its functionality.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The scan line transitions from a two-dimensional straight path to a three-dimensional curved path by bending in multiple directions. The scan line extends in the first direction, then bends to extend in the second direction, and finally bends again to extend in the first direction, utilizing spatial dimensionality to reduce area occupation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the scan line is extended to cover necessary transistor regions, then transistor control is improved, but the scan line overlaps with connection electrodes causing parasitic capacitance and luminance deviation

Engineering Contradiction:
Improvetransistor controlVSAvoidparasitic capacitance
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The harmful overlap between the scan line and connection electrode is extracted and eliminated. The scan line is specifically routed to overlap with the semiconductor layer while being separated from the connection electrode in plan view, removing the parasitic capacitance source while maintaining necessary transistor control.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The scan line has different spatial relationships with different components: it overlaps with the semiconductor layer in certain regions to control transistors, but is separated from the connection electrode in plan view to avoid parasitic capacitance. This localized differentiation of spatial quality resolves the contradiction.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12457834B2Display device
Publication Date: 2025.10.28 SAMSUNG DISPLAY CO LTD
  • US12457834B2 patent drawing
  • US12457834B2 patent drawing
  • US12457834B2 patent drawing

AI summary

A display device comprises a substrate, a first channel above the substrate, a first gate electrode overlapping the first channel, a storage electrode above the first gate electrode, a first connection electrode above the storage electrode, and connected with the first gate electrode, a third channel of a third transistor above the substrate, and a second scan line including a third gate electrode overlapping the third channel, wherein the third transistor includes a second electrode connected with the first connection electrode, and wherein the second scan line includes a first portion including the third gate electrode, and extending in a first direction, a second portion bent from the first portion, and extending in a second direction in parallel with a first side of the storage electrode, and a third portion bent from the second portion, and extending in the first direction in parallel with a second side of the storage electrode.