Benzylidenecyanoacetate Resist Underlayer for Wet-Etchable Patterning
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Solution Overview
Problem
Conventional resist underlayer films have limited performance in being soluble in wet etching chemicals while maintaining resistance to organic solvents and aqueous alkali developers, which is crucial for semiconductor manufacturing processes to ensure proper pattern formation and substrate protection.
Innovation Solution
A resist underlayer film-forming composition containing a compound with specific structural features, such as a benzylidenecyanoacetate group, which is soluble in wet etching chemicals and resistant to organic solvents and alkali developers, along with crosslinking agents and acid generators, to enhance etching speed and pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional resist underlayer films are made resistant to organic solvents and aqueous alkali developers, then they maintain structural integrity during resist processing, but they become difficult to remove by wet etching
Solution Approach 1:
The invention changes the chemical composition parameters of the resist underlayer film by incorporating specific compounds (compounds 1-6) with distinct molecular structures that contain functional groups responsive to wet etching chemicals. This allows the film to be removed by wet etching while maintaining resistance to resist solvents and developers through proper formulation
Solution Approach 2:
The invention uses composite material formulation by combining specific compounds (compounds 1-6) with solvents and optional additives to create a resist underlayer film that exhibits multiple properties: resistance to organic solvents and aqueous alkali developers, while being removable by wet etching chemicals. The composite nature allows simultaneous achievement of contradictory properties
2Object-affected harmful factors
If wet etching is used to remove resist underlayer films, then substrate damage is reduced, but the etching speed is insufficient compared to dry etching
Solution Approach 1:
The invention changes the chemical parameters of the resist underlayer film composition to include compounds with specific functional groups that enhance reactivity with wet etching chemicals. This increases the etching speed of wet etching while maintaining the gentler nature of wet etching that reduces substrate damage
Solution Approach 2:
The invention creates a chemical composition that mimics the high removal efficiency of dry etching but through wet chemical means. The specific compound formulation allows wet etching to achieve etching speeds comparable to dry etching while preserving the advantage of reduced substrate damage
3Ease of manufacture
If resist underlayer films are made soluble in wet etching chemicals, then they can be easily removed, but they lose resistance to resist solvents and developers
Solution Approach 1:
The invention applies local quality by designing the resist underlayer film with specific functional groups and molecular structures that create selective solubility. The film is resistant to organic solvents and aqueous alkali developers but soluble in wet etching chemicals, achieving different solubility properties in different chemical environments through careful molecular design
Solution Approach 2:
The invention changes the chemical parameters of the film composition to achieve selective solubility behavior. By controlling the molecular structure and functional groups of the compounds used, the film exhibits resistance to certain chemicals (resist solvents and developers) while being soluble in others (wet etching chemicals)
Data Source
AI summary
A resist underlayer film-forming composition contains: (A) a compound having a partial structure represented by Formula (1). In Formula (1), R1 and R2 each denote a hydrogen atom, an alkyl group having 1-10 carbon atoms or an aryl group having 6-40 carbon atoms, X denotes an alkyl group having 1-10 carbon atoms, a hydroxyl group, an alkoxy group having 1-10 carbon atoms, an alkoxycarbonyl group having 1-10 carbon atoms, a halogen atom, a cyano group, a nitro group or a combination of these, Y denotes a direct bond, an ether bond, a thioether bond or an ester bond, n is an integer between 0 and 4, and * denotes a site of bonding to a residue of compound (A)); and a solvent.