BEOL Thermal Spreading With High-Conductivity ILD Layers
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Solution Overview
Problem
The challenge of thermal management in semiconductor devices, exacerbated by heterogeneous integration and thermal contact resistance, limits performance and reliability, particularly in structures with backside power delivery.
Innovation Solution
Incorporation of high thermal conductivity interlayer dielectric materials in the frontside and/or backside BEOL structures, along with additional metal vias and high thermal conductive conductors, to enhance heat transport and removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If heterogeneous integration with multiple dies is used to continue Moore's law, then electrical performance is improved, but thermal contact resistance increases leading to higher temperature rise
Solution Approach 1:
The patent uses composite material structures including interlayer dielectric materials with high thermal conductivity (greater than 0.5 W/mK) combined with traditional low-k dielectric materials. This composite approach allows the structure to maintain the electrical insulation properties of dielectrics while incorporating thermal conduction pathways through the high thermal conductivity ILD layers, thereby reducing temperature rise in heterogeneous integration structures.
Solution Approach 2:
The patent introduces interlayer dielectric materials with high thermal conductivity as intermediary layers between different dies and heat sinks. These ILD layers act as thermal mediators that facilitate heat transfer from the semiconductor devices through the package structure, reducing thermal contact resistance and improving overall thermal management in heterogeneous integration systems.
2Reliability
If traditional low thermal conductivity dielectric materials are used in BEOL structures, then electrical insulation is maintained, but heat transport capability is insufficient
Solution Approach 1:
The patent applies local quality by using different interlayer dielectric materials with different thermal conductivity properties in different regions of the BEOL structure. Specifically, high thermal conductivity ILD materials (greater than 0.5 W/mK) are placed in regions where heat transport is critical, while traditional low-k dielectric materials are used in regions where electrical insulation is the primary concern. This spatial differentiation optimizes both electrical insulation and heat transport capabilities.
Solution Approach 2:
The patent employs composite dielectric structures combining high thermal conductivity ILD materials with traditional low-k dielectric materials. This composite approach allows the BEOL structure to simultaneously achieve good electrical insulation from the dielectric layers and effective heat transport through the high thermal conductivity ILD regions, resolving the contradiction between these two requirements.
3Temperature
If additional metal vias are added beyond signal and power delivery requirements, then heat transport through structure is enhanced, but device complexity increases
Solution Approach 1:
The patent makes existing metal via structures multi-functional by having them serve both their traditional electrical functions (signal and power delivery) and an additional thermal function (heat transport). By optimizing the dimensions, materials, and distribution of these existing vias, the structure achieves enhanced heat transport capability without adding separate dedicated thermal pathways, thereby minimizing increases in device complexity.
Solution Approach 2:
The patent merges the thermal management function with the existing electrical interconnect structure. Instead of creating separate thermal pathways, the metal vias that already exist for signal and power delivery are designed to also function as heat conduction pathways. This merging of functions achieves heat transport enhancement while avoiding the complexity of adding separate thermal management structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves thermal heat spreading and removal capabilities, enhancing performance and reliability by effectively managing heat generated in semiconductor chips and packages.
Implementation Method 1
an interlayer dielectric (ILD) material in at least one of the frontside back-end-of-the-line (BEOL) structure or the backside BEOL structure that has a high thermal conductivity
Implementation Method 2
additional metal vias beyond that which is required for typical signal and/or power delivery can be used to transport heat through the structure
Data Source
AI summary
Structures including semiconductor chips (including chiplets and stacked chips/chiplets) are provided in which thermal heat removal is enhanced. The enhanced thermal heat removal is provided by utilizing interlayer dielectric (ILD) materials in at least one of the frontside back-end-of-the-line (BEOL) structure or the backside BEOL structure that have a high thermal conductivity.