β-(AlxGa1-x)2O3 Composition for Thick Power Device Epitaxy
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Solution Overview
Problem
Current semiconductor materials used in power devices are reaching their performance limits, necessitating compositions and devices with improved properties, particularly in terms of thick film growth, controllable doping, and smooth surface morphology to enhance device performance.
Innovation Solution
The development of β-(AlxGa1-x)2O3 compositions with low Al content (x < 5%) and n-carrier dopants, grown using methods like MOCVD at controlled temperatures and pressures, achieving fast growth rates and smooth surfaces, enabling high-quality thick films with tunable doping for vertical power devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor materials are used in power devices, then current device performance is maintained, but performance improvement is limited as materials reach their limits
Solution Approach 1:
The patent changes the material composition parameters by using β-(AlxGa1-x)2O3 with controlled Al content (x < 5%) and adjustable n-carrier dopant concentrations (1×10^14 to 5×10^17 cm^-3), enabling improved critical field strength and electron mobility beyond conventional materials
Solution Approach 2:
The patent employs composite material strategy by creating Al-Ga-O ternary compounds that combine the advantages of Ga2O3 (high breakdown field) with Al2O3 (structural stability), achieving superior electrical properties while maintaining mechanical integrity
2Length of stationary object
If thick films are grown to enhance device performance, then device functionality is improved, but surface morphology deteriorates with roughness and defects
Solution Approach 1:
The patent optimizes growth parameters including temperature (650-1000°C), pressure (1-760 Torr), and precursor flow rates to achieve fast growth rates (>3 μm/h) while maintaining smooth surfaces, demonstrating that parameter optimization can decouple thickness from surface quality
Solution Approach 2:
The patent uses low Al content (x < 5%) as an intermediary composition that suppresses surface roughening defects during thick film growth, acting as a mediator between the substrate and the growing film to maintain surface quality throughout the thickness buildup
3Productivity
If fast growth rates are achieved to improve productivity, then manufacturing efficiency is enhanced, but film quality may deteriorate with defects and roughness
Solution Approach 1:
The patent identifies optimal parameter windows (temperature 650-1000°C, pressure 1-760 Torr, low Al content x < 5%) that enable fast growth rates exceeding 3 μm/h while maintaining high film quality with smooth surfaces and controlled doping, proving that quality and productivity can be simultaneously achieved through parameter optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces β-(AlxGa1-x)2O3 films with enhanced critical field strength and electron mobility, facilitating the fabrication of high-performance vertical Schottky barrier diodes and PN heterojunction power diodes with increased breakdown voltage and power figure-of-merit.
Implementation Method 1
comprising at least one n-carrier dopant in a concentration of about 1×10^14 cm−3 to about 5×10^17 cm−3
Implementation Method 2
the method of forming the Al-Ga-containing film comprises metal-organic chemical vapor deposition (MOCVD)
Implementation Method 3
the method of forming the Al-Ga-containing film comprises metal-organic chemical vapor deposition (MOCVD), molecular-beam epitaxy (MBE)
Data Source
AI summary
Disclosed herein are compositions, methods, and devices. Disclosed herein is a composition comprising a β-(AlxGa1-x)2O3, having an x value of less than about 5% and comprising at least one n-carrier dopant. Also disclosed are methods of making the same. Also disclosed are devices comprising the disclosed compositions.