Beta-Ga2O3 Substrate Orientation for HVPE Growth
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Solution Overview
Problem
Existing methods for growing β-Ga2O3-based single crystal films by the HVPE method face challenges in achieving high growth rates and good surface morphology on semiconductor substrates.
Innovation Solution
The method involves adjusting the angle θ between the principal plane of the β-Ga2O3-based single crystal substrate and the (100) plane to specific ranges, such as not less than 0.3° and not more than 15° for high growth rates, and not less than 41.6° and not more than 78.4° for improved surface morphology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the principal plane of the substrate is adjusted to a predetermined plane orientation for high growth rate, then the growth rate increases, but the surface morphology deteriorates
Solution Approach 1:
The invention changes the plane orientation parameter of the substrate from conventional orientations to a specific range (50-90 degrees rotated from the (100) face), which simultaneously optimizes both growth rate and surface morphology. This parameter adjustment resolves the contradiction by finding an optimal orientation that balances both requirements.
2Manufacturing precision
If the growth temperature is increased to 900°C or higher for high quality crystal growth, then the crystal quality improves, but the process complexity increases
Solution Approach 1:
The invention raises the growth temperature to 900°C or higher, which thermodynamically favors high-quality crystal formation with fewer defects. Although this requires more sophisticated temperature control, the benefit of obtaining high-quality β-Ga2O3 single crystal films justifies the increased process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient growth of β-Ga2O3-based single crystal films with high growth rates and enhanced surface morphology, improving the quality and yield of semiconductor elements.
Implementation Method 1
a technique of forming a β-Ga2O3 single crystal film on a β-Ga2O3-based substrate by epitaxial crystal growth using the MBE (Molecular Beam Epitaxy) method
Implementation Method 2
a method for growing a β-Ga2O3-based single crystal film by using the HVPE method, and including a step for exposing a Ga2O3-based substrate to a gallium chloride gas and an oxygen-containing gas
Data Source
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Figure 3A~3D
AI summary
[Problem] To provide: a semiconductor substrate comprising a β-Ga2O3-based single crystal, with which an epitaxial layer comprising the β-Ga2O3-based single crystal can be grown by the HVPE method at a high growth rate, or with which an epitaxial layer comprising the β-Ga2O3-based single crystal having good surface morphology can be grown; an epitaxial wafer having the semiconductor substrate and an epitaxial layer; and a method for producing the epitaxial wafer. [Solution] One embodiment is a semiconductor substrate 11 which is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method, wherein the semiconductor substrate 11 comprises a β-Ga2O3-based single crystal, and a plane parallel to the [100] axis of the β-Ga2O3-based single crystal is a principal plane 12.