Beta-Phase Alumina Remote Plasma System for Semiconductor Etching

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Solution Overview

Problem

The use of plasma in semiconductor manufacturing processes, such as deposition and etching, while enhancing efficiency, poses challenges that need to be addressed to improve process efficiency and reduce maintenance costs and downtime.

Innovation Solution

A remote plasma system utilizing a plasma block made of beta-phase aluminum oxide, which generates plasma for deposition and etching processes, minimizing plasma pollution and maintaining process reliability, and includes a dual-zone showerhead for even precursor distribution and a control unit for precise process control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If plasma is used in deposition and etching processes, then process efficiency is enhanced, but plasma pollution increases and maintenance needs increase

Engineering Contradiction:
Improveprocess efficiencyVSAvoidplasma pollution
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The plasma generation system is segmented into a remote plasma source separated from the reaction chamber. The plasma is generated in a plasma generation chamber and then transported to the reaction chamber, dividing the plasma generation function from the deposition/etching function to reduce plasma pollution in the reaction chamber

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A plasma transfer chamber with differential pumping acts as an intermediary between the plasma generation chamber and the reaction chamber. This intermediary system allows plasma to be transported while maintaining pressure differential, preventing plasma pollution from directly contaminating the reaction chamber

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If plasma is used in deposition and etching processes, then process efficiency is enhanced, but maintenance costs and downtime increase

Engineering Contradiction:
Improveprocess efficiencyVSAvoidmaintenance needs
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The system is divided into separate chambers: plasma generation chamber, plasma transfer chamber, and reaction chamber. This segmentation isolates the plasma generation components from the reaction chamber, reducing contamination and maintenance needs in the reaction chamber

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The plasma generation source is extracted from the reaction chamber and placed in a separate remote chamber. This extraction removes the harmful plasma generation effects from the reaction environment while maintaining the beneficial plasma effects for deposition and etching

Inventive Principle:
Principle #2Taking out (Extraction)

3Quantity of substance

If conventional plasma generation is used, then plasma is generated for deposition and etching, but plasma distribution uniformity decreases

Engineering Contradiction:
Improveplasma generationVSAvoidprecursor distribution uniformity
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The showerhead design incorporates multiple zones (dual-zone showerhead) that distribute plasma and precursors in a controlled manner across different spatial dimensions, improving uniformity of precursor distribution over the substrate surface

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The remote plasma system enhances process efficiency, reduces maintenance needs, and improves yield by maintaining a cleaner plasma generation process, leading to a broader processing window and lower operational costs.

Implementation Method 1

A remote plasma system utilizing a plasma block made of beta-phase aluminum oxide, which generates plasma for deposition and etching processes

Methodology Applied
Scientific EffectPlasma generation: Plasma

Data Source

PatentUS10011532B2Remote plasma system and method
Publication Date: 2018.07.03 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10011532B2 patent drawing
  • US10011532B2 patent drawing
  • US10011532B2 patent drawing

AI summary

A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.