Beta-SiAlON Phosphor Manufacturing for LED Wavelength Control

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Solution Overview

Problem

The luminescent efficiency of Eu-doped β-SiAlON deteriorates when attempting to reduce the wavelength and bandwidth of its fluorescent spectrum, and there is poor reproducibility of luminescent properties in its manufacturing process.

Innovation Solution

A method of manufacturing β-SiAlON with controlled physical properties, including specific ranges for Al, O, Si, N, and Eu content, baked in a nitrogen atmosphere at high temperatures, followed by optional annealing and acid treatment to achieve high fluorescent efficiency and reduced wavelength and bandwidth.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the wavelength and bandwidth of the fluorescent spectrum of β-SiAlON are reduced, then the color purity and precision are improved, but the luminescent efficiency deteriorates

Engineering Contradiction:
Improvewavelength and bandwidth controlVSAvoidluminescent efficiency
Core Design Contradiction:
Measurement precisionVSLoss of energy

Solution Approach 1:

The patent applies parameter changes by precisely controlling the Al content (0.3-1.2 mass%), O content (0.15-1 mass%), O/Al molar ratio (0.9-1.3), and baking temperature (1850°C-2050°C) to achieve the desired balance between wavelength reduction and luminescent efficiency maintenance. This systematic parameter optimization resolves the contradiction by finding the optimal operating point where both color purity and efficiency are satisfied.

Inventive Principle:
Principle #35Parameter changes

2Illumination intensity

If the luminescent efficiency is improved by doping Eu, then the brightness is enhanced, but the reproducibility of luminescent properties deteriorates

Engineering Contradiction:
Improveluminescent efficiencyVSAvoidreproducibility of luminescent properties
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent resolves the reproducibility issue by establishing precise parameter ranges including Eu content (0.3-0.7 mass%), Al content (0.3-1.2 mass%), and O/Al molar ratio (0.9-1.3), combined with controlled baking temperatures (1850°C-2050°C). These defined parameters ensure consistent luminescent properties across multiple manufacturing batches while maintaining high efficiency.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs feedback control through measuring the luminescent properties and adjusting the composition parameters accordingly. By monitoring the luminescent efficiency and reproducibility, the manufacturing process can be optimized to maintain Eu doping within the optimal range of 0.3-0.7 mass%, ensuring both high brightness and consistent performance.

Inventive Principle:
Principle #23Feedback

3Measurement precision

If the O content is reduced to narrow the bandwidth, then the color precision is improved, but the luminescent efficiency deteriorates

Engineering Contradiction:
Improvebandwidth controlVSAvoidluminescent efficiency
Core Design Contradiction:
Measurement precisionVSLoss of energy

Solution Approach 1:

The patent resolves this contradiction by controlling the O content within a specific range (0.15-1 mass%) and maintaining the O/Al molar ratio between 0.9-1.3. This balanced approach allows bandwidth reduction for color precision while preventing excessive O depletion that would harm luminescent efficiency. The interrelated control of O content and O/Al ratio ensures optimal performance.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves high fluorescent efficiency and reproducibility of β-SiAlON with reduced wavelength and bandwidth, suitable for use in white light emitting diodes and ultraviolet light emitting diodes, maintaining performance across various conditions.

Implementation Method 1

the powdered material is baked in the baking step at temperatures from 1850°C to 2050°C in a nitrogen atmosphere

Methodology Applied
Scientific EffectSintering: Sintering

Implementation Method 2

β-SiAlON produced in a first heat treatment step is subjected to acid treatment in the second heat treatment step to improve its crystallinity

Methodology Applied
Scientific EffectCrystallisation: Crystallisation

Implementation Method 3

β-SiAlON available for luminescent devices such as white light emitting diodes using blue light emitting diode chips or ultraviolet light emitting diode chips

Methodology Applied
Scientific EffectFluorescence: Fluorescence

Implementation Method 4

the wavelength and bandwidth of the fluorescent spectrum of the β-SiAlON

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentEP2615154B1METHOD FOR PRODUCING TYPE ß-SIALON
Publication Date: 2017.04.26 DENKA CO LTD

AI summary

A method of manufacturing β-SiAlON represented by a general formula Si6-zAlzOzN8-z: Eu, including a baking step for baking a powdered material that contains Al content from 0.3 to 1.2 mass%, O content from 0.15 to 1 mass%, O/Al molar ratio from 0.9 to 1.3, Si content from 58 to 60 mass%, N content from 37 to 40 mass%, N/Si molar ratio from 1.25 to 1.45, and Eu content from 0.3 to 0.7 mass%. The baking step is a step of baking the powdered material in a nitrogen atmosphere at temperatures from 1850°C to 2050°C, and the manufactured β-SiAlON satisfies 0.280 ≤ x ≤ 0.340 and 0.630 ≤ y ≤ 0.675 on the CIExy chromaticity coordinate.