Bevel Edge Plasma Chamber With Top And Bottom Electrodes
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Solution Overview
Problem
During substrate processing, etch byproducts and deposited films accumulate at the bevel edge and chamber interior, leading to potential device yield issues due to flaking and particle contamination.
Innovation Solution
A plasma processing chamber design with RF-powered bottom and edge electrodes, along with dielectric rings, generates a cleaning plasma to effectively remove etch byproducts and films from the bevel edge and chamber interior, utilizing tunable RF circuits and specific gas chemistries to improve process yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma processing is performed on substrate, then etching and deposition are achieved, but etch byproducts and polymer layers accumulate on bevel edge surfaces
Solution Approach 1:
The patent applies oxygen plasma treatment to convert the harmful polymer byproducts into volatile compounds that can be removed. The oxygen plasma reacts with the carbon-based polymer layers on the bevel edge, transforming them into CO and CO2 gases that are pumped away, thus converting the accumulation problem into a removable byproduct stream
Solution Approach 2:
The patent changes the plasma chemistry parameters by introducing oxygen-containing gases (O2, O3, N2O) to the plasma process. This parameter change transforms the plasma from a purely etching/deposition mode to a cleaning mode where oxidative reactions dominate, enabling removal of polymer byproducts while maintaining process control
2Productivity
If multiple etch processes are performed, then device manufacturing is completed, but polymer layers weaken and flake off onto other substrates
Solution Approach 1:
The patent implements a preliminary cleaning step using oxygen plasma between multiple etch processes. This preliminary action removes accumulated polymer byproducts before they can weaken and flake off during subsequent processing, preventing contamination of other substrates in the batch
Solution Approach 2:
The patent integrates continuous or periodic oxygen plasma cleaning cycles within the overall etch process sequence. This ensures that polymer removal is an ongoing action rather than a separate step, maintaining substrate cleanliness throughout the manufacturing process and preventing flake-off issues
3Productivity
If chamber interior is not cleaned, then processing continues, but polymer accumulation on chamber walls occurs
Solution Approach 1:
The patent enables the chamber to clean itself by directing oxygen plasma toward the chamber walls and interior surfaces. The chamber structure itself becomes the target of the cleaning plasma, allowing autonomous removal of polymer deposits without requiring manual intervention or separate maintenance cycles
Solution Approach 2:
The patent makes the plasma processing system multi-functional by enabling it to perform both device processing (etching/deposition) and chamber cleaning (autoclean) using the same hardware infrastructure. The oxygen plasma chemistry serves dual purposes: processing materials on substrates and cleaning chamber surfaces
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces polymer buildup at the substrate bevel edge and chamber interior, minimizing particle defects and enhancing device yield by generating a controlled cleaning plasma that efficiently removes etch byproducts and deposited films.
Implementation Method 1
A plasma processing chamber design with RF-powered bottom and edge electrodes, along with dielectric rings, generates a cleaning plasma to effectively remove etch byproducts and films from the bevel edge and chamber interior
Data Source
AI summary
A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.