Bevel Etcher Gap Control for Semiconductor Substrate Cleaning
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Solution Overview
Problem
The accumulation of byproduct layers on the bevel edges of semiconductor substrates during etching processes leads to weakened bonds and potential contamination of other substrates, as these layers can peel off during transport, due to non-uniform etching and plasma density issues near the substrate edges.
Innovation Solution
A bevel etcher with adjustable electrode assemblies and mechanisms for tilt angle and horizontal translation, which generates plasma for cleaning the bevel edges, ensuring uniform etching and preventing contamination by maintaining precise alignment and plasma exclusion zones.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma etching is performed on substrate edges, then byproduct layers accumulate on bevel edges, but etching uniformity is improved
Solution Approach 1:
The patent extracts and removes the accumulated byproduct layers from the substrate bevel edges through a dedicated cleaning process using plasma generation between electrode assemblies, separating the etching function from the cleaning function to prevent contamination
Solution Approach 2:
The patent performs preliminary cleaning of the substrate bevel edges by generating plasma in the gap between electrode assemblies before the substrates are transported and stacked, preventing byproduct layer accumulation that would otherwise occur during subsequent processing steps
2Productivity
If multiple etch processes are performed successively, then byproduct layers build up on substrate surfaces, but processing completeness is improved
Solution Approach 1:
The patent implements continuous cleaning action by generating plasma between electrode assemblies during and between etch processes, maintaining clean substrate surfaces throughout the manufacturing sequence rather than allowing byproduct accumulation
Solution Approach 2:
The cleaning process is performed preliminarily between etch steps to remove byproduct layers before they can accumulate and weaken substrate bonds, ensuring reliability is maintained throughout multiple processing cycles
3Productivity
If substrates are stacked for transport, then processing efficiency is improved, but contamination risk increases due to peeling byproduct layers
Solution Approach 1:
The patent performs preliminary cleaning of substrate bevel edges by generating plasma between electrode assemblies before substrates are stacked for transport, removing byproduct layers that would otherwise peel off and cause contamination during handling
Solution Approach 2:
The patent extracts and removes potential contaminants (byproduct layers) from substrate surfaces before stacking, preventing the harmful effect of contamination during transport while maintaining processing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures uniform etching of the bevel edges, preventing the accumulation and peeling of byproduct layers, thus reducing contamination and enhancing the cleanliness and reliability of semiconductor substrate processing.
Implementation Method 1
The lower and upper electrode assemblies being operative to generate plasma for cleaning the bevel edge during operation
Data Source
AI summary
A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.