Bevel Etching with Peripheral Resist Removal for Pattern Stability
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Solution Overview
Problem
The complexity of semiconductor device manufacturing leads to issues like pattern peeling and collapse over the bevel portion of the substrate, resulting in reduced yield due to reattached particles during manufacturing processes.
Innovation Solution
A method involving the formation of a target layer and an energy-sensitive layer over a semiconductor substrate, where an energy treating process forms a treated portion in the peripheral region, which is then removed to expose the bevel portion, allowing for the transfer of a pattern from the remaining energy-sensitive layer to the target layer using dry etching, thereby reducing defects and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional manufacturing processes are used for semiconductor devices, then manufacturing complexity increases, but pattern peeling and collapse occur over the bevel portion
Solution Approach 1:
The patent applies preliminary action by performing an energy treating process (electron beam irradiation) on the peripheral region of the energy-sensitive layer before the main etching process. This pre-treatment modifies the material properties in advance to prevent pattern peeling and collapse during subsequent manufacturing steps, thereby maintaining pattern stability despite increasing manufacturing complexity.
2Manufacturing precision
If the energy-sensitive layer is removed completely, then the target layer is fully exposed, but the bevel portion cannot be protected from pattern defects
Solution Approach 1:
The patent applies local quality by creating a spatially differentiated structure in the energy-sensitive layer: a treated peripheral region that is removed to expose the bevel portion for protection, and an untreated central region that remains to serve as a mask for precise pattern transfer. This local differentiation allows simultaneous achievement of pattern transfer accuracy and protection against pattern peeling and collapse.
3Reliability
If the peripheral region is treated and removed, then the bevel portion is exposed and protected, but the central region must be precisely maintained
Solution Approach 1:
The patent applies segmentation by dividing the energy-sensitive layer into two distinct functional regions: a peripheral region subjected to energy treatment and removal for protecting the bevel portion and improving yield, and a central region that remains untreated to maintain manufacturing precision for pattern transfer. This segmentation allows independent optimization of each region's function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces pattern peeling and collapse over the bevel portion, improving the yield and performance of semiconductor devices by eliminating reattached particles and defect risks.
Implementation Method 1
The energy treating process is an electron-beam (e-beam) writing process
Data Source
AI summary
A bevel etching method includes forming a target layer over a semiconductor substrate, and forming an energy-sensitive layer over the target layer. The method also includes performing an energy treating process to form a treated portion in the energy-sensitive layer. The treated portion is in a peripheral region. The method further includes removing the treated portion such that a remaining portion of the energy-sensitive layer is in a central region surrounded by the peripheral region, and transferring a pattern of the remaining portion of the energy-sensitive layer to the target layer.