Bevel Edge Ring Cleaning Gas Flow for Plasma Substrate Supports
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional cleaning processes in plasma processing chambers are ineffective in removing residue accumulation from the bevel area of substrate supports, leading to substrate contamination and process uniformity issues, as they fail to reliably address the buildup of particles and contaminants at the edge of the substrate support between the dummy substrate and the ring.
Innovation Solution
A method involving the placement of a cover substrate with machined channels to direct a cleaning gas, such as oxygen, through the substrate support to the bevel edge area between the outer diameter of the cover substrate and the edge ring, allowing for direct delivery of cleaning gases to hard-to-reach areas, thereby enhancing cleaning efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dummy substrate is placed on the substrate support to protect it during cleaning operations, then the substrate support is protected from damage, but the cleaning gases are unable to reliably remove contamination at the edge area between the dummy substrate and the ring
Solution Approach 1:
The cleaning process is segmented into multiple distinct steps: a remote plasma portion for general cleaning, a bias portion for targeted cleaning, and a new bevel cleaning portion for the edge area. This segmentation allows each step to address specific contamination areas with appropriate cleaning mechanisms, effectively removing particles from previously inaccessible bevel regions between the substrate and ring
Solution Approach 2:
A bevel cleaning gas is introduced as an intermediary substance to specifically target and clean the bevel area. This gas acts as a mediator that delivers cleaning action to the difficult-to-reach edge region without requiring direct physical access from the main cleaning gas flow, thereby removing contamination that would otherwise accumulate
2Productivity
If conventional 2-step cleaning processes are used, then the cleaning process is simple and quick, but they are unable to address residue accumulation in the bevel area of the ring
Solution Approach 1:
The cleaning process is divided into three distinct segments: a remote plasma portion for initial cleaning, a bias portion for targeted cleaning, and a bevel cleaning portion for the edge area. Each segment performs a specific cleaning function with appropriate parameters, ensuring complete removal of residues from all surfaces including the previously inaccessible bevel area while maintaining efficient processing
Solution Approach 2:
Different cleaning conditions and gas types are applied to different areas: the remote plasma portion addresses general chamber contamination, the bias portion targets specific regions, and the bevel cleaning gas specifically treats the edge area between the substrate and ring. This localized approach ensures thorough cleaning of each region with optimized parameters, achieving both completeness and efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively cleans the bevel area of the substrate support, reducing particle accumulation and contamination, improving process uniformity, and decreasing the need for frequent chamber maintenance, resulting in increased throughput and reduced maintenance costs.
Implementation Method 1
A plasma is struck in the interior volume of the processing chamber
Data Source
AI summary
Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.