BF3-B2F4 Gas Mixtures for Higher Boron Ion Beam Current
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Solution Overview
Problem
Existing ion implantation technologies face challenges in achieving high beam currents and efficient ion implantation processes, particularly with boron ions, leading to reduced performance and source life.
Innovation Solution
The use of gas mixtures comprising BF3 and B2F4, which can include isotopically-enriched boron, in an assembly configured to supply these gases to an ion implantation device, enhances boron ion beam current and reduces unwanted peaks, thereby improving implantation performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional single gas component (BF3) is used for ion implantation, then the process is simple to operate, but the beam current of boron ions is limited and source life is reduced
Solution Approach 1:
The patent uses a composite gas mixture comprising BF3 and B2F4 (in a volume ratio of 90:10 to 10:90) instead of pure BF3. This composite gas composition generates higher beam currents of boron ions (up to 2.5 times higher) while maintaining stable operation and extending source life, resolving the contradiction between productivity improvement and complexity increase.
2Manufacturing precision
If conventional gas components are used for ion implantation, then the system operation is straightforward, but unwanted peaks appear in the beam spectrum reducing implantation quality
Solution Approach 1:
The patent employs a composite gas mixture of BF3 and B2F4 that produces a cleaner beam spectrum with reduced unwanted peaks compared to conventional single-component gases. The specific composition ratio (90:10 to 10:90 by volume) is optimized to minimize contaminant peaks while maintaining high boron ion beam current, thereby improving manufacturing precision without excessive complexity.
3Duration of action of stationary object
If conventional gas components are used, then the source has limited operational life, but changing to extended-life components increases system complexity
Solution Approach 1:
The patent utilizes a composite gas mixture of BF3 and B2F4 that extends source operational life by reducing the formation of tungsten peaks and other contaminants that degrade the ion source. The gas mixture maintains stable beam characteristics over extended periods, effectively increasing source life without requiring complex modifications to the gas supply system infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The gas mixtures significantly increase boron ion beam current and extend source life by reducing unwanted peaks, resulting in improved ion implantation efficiency.
Implementation Method 1
a gas is ionized to generate an ion beam
Implementation Method 2
arc chamber of an ion implantation device
Data Source
AI summary
An assembly for ion implantation is provided herein. An assembly comprises at least one vessel configured to be fluidly coupled to an arc chamber of an ion implantation device. The at least one vessel comprises a gas component comprising BF3 and B2F4. When the gas component is supplied from the at least one vessel to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component. Related systems, including ion implantation systems, and related methods are provided herein.