Bi-Nb Oxide Dielectric Temperature Stability
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Solution Overview
Problem
Conventional methods for manufacturing solid state electronic devices using oxide dielectrics face challenges such as low efficiency in material usage and energy consumption, long processing times, and difficulty in large-area fabrication, with dielectric constants being sensitive to ambient temperature changes.
Innovation Solution
The development of an oxide dielectric comprising bismuth (Bi) and niobium (Nb) with controlled crystal phases, specifically a pyrochlore-type and β-BiNbO4-type crystal structures, which have opposite temperature characteristics, allowing for a dielectric constant that is less affected by ambient temperature changes, and a simplified manufacturing process using non-vacuum methods like screen printing or nanoimprinting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vacuum processes and photolithographic processes are used to manufacture solid state electronic devices, then manufacturing precision can be maintained, but production time increases and productivity decreases
Solution Approach 1:
The invention extracts and eliminates the vacuum process step from the conventional manufacturing sequence. By using atmospheric pressure sintering instead of vacuum sintering, the process removes a time-consuming and equipment-intensive step while maintaining the ability to produce high-precision oxide dielectric layers with controlled crystal phases.
Solution Approach 2:
The invention replaces the photolithographic patterning system with a simpler direct printing or screen printing system. This substitution eliminates complex photoresist coating, exposure, and development steps while achieving comparable patterning precision through direct material deposition and selective sintering.
2Manufacturing precision
If conventional vacuum processes are used for manufacturing, then material purity can be maintained, but energy consumption increases and manufacturing efficiency decreases
Solution Approach 1:
The invention extracts the vacuum environment requirement from the sintering process. By developing atmospheric pressure sintering techniques with controlled atmosphere (air or oxygen), the process eliminates the energy-intensive vacuum pumping and maintenance while achieving equivalent or superior material purity through oxidative processing that prevents reduction reactions.
Solution Approach 2:
The invention changes the pressure parameter from vacuum (low pressure) to atmospheric pressure (high pressure), and adjusts the atmosphere composition from vacuum to controlled oxygen-containing atmosphere. This parameter change fundamentally alters the energy balance by eliminating vacuum requirements while maintaining material purity through oxidative conditions that prevent unwanted reactions.
3Manufacturing precision
If conventional photolithographic processes are used, then pattern precision can be achieved, but processing time increases and large-area fabrication becomes difficult
Solution Approach 1:
The invention extracts and removes the photolithography step from the manufacturing process. By using direct printing methods or screen printing with patterned masks, the process achieves pattern formation in a single deposition step rather than through multiple photolithography steps (coating, pre-bake, exposure, development, post-bake), dramatically reducing processing time.
Solution Approach 2:
The invention uses direct printing or screen printing to copy the desired pattern directly onto the substrate during material deposition. This copying approach eliminates the need for separate patterning steps and enables large-area fabrication by using flexible printing masks that can cover large surfaces, overcoming the area limitations of photolithography.
4Reliability
If oxide dielectric with high dielectric constant is used, then capacitor performance improves, but temperature stability of dielectric constant deteriorates
Solution Approach 1:
The invention creates a composite oxide dielectric system containing multiple crystal phases (pyrochlore phase and β-BiNbO4 phase) within a single material layer. The pyrochlore phase provides high dielectric constant for capacitor performance, while the β-BiNbO4 phase provides temperature stability. The synergistic combination of these phases in controlled ratios achieves both high performance and temperature stability that neither phase could achieve alone.
Solution Approach 2:
The invention changes the crystal phase composition parameters by controlling sintering temperature, atmosphere, and time to achieve specific phase ratios. By adjusting these parameters, the material transitions from single-phase to multi-phase composition, enabling simultaneous optimization of dielectric constant and temperature stability through phase engineering rather than chemical composition changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-performance solid state electronic devices with improved resistance to ambient temperature changes and increased industrial productivity, using a more energy-efficient and simpler process compared to conventional methods.
Implementation Method 1
the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide in a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide in the temperature range
Implementation Method 2
heating, in an oxygen-containing atmosphere, a precursor derived from a precursor solution, as a starting material, comprising a bismuth (Bi)-containing precursor and a niobium (Nb)-containing precursor as solutes, to form an oxide
Data Source
AI summary
There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric.An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a β-BiNbO4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.