Sputtering target and magnetic film

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Solution Overview

Problem

Existing sputtering targets for magnetic recording media face issues with unstable discharge during film formation, leading to arcing and particle generation, which cannot be adequately addressed by previous refinement techniques, and the inclusion of Mn may not be preferable in all applications.

Innovation Solution

A sputtering target composition with 0.001 mol % to 0.5 mol % Bi, 45 mol % or less of Cr, 45 mol % or less of Pt, and 60 mol % or less of Ru, along with 1 mol % to 35 mol % of at least one metal oxide, balances Co and inevitable impurities, stabilizing discharge and reducing arcing by lowering the work function and enhancing electron emission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If oxide particles are dispersed in Co-Cr-Pt metal phases for sputtering target, then film formation quality is improved, but arcing occurs during discharge causing particle generation

Engineering Contradiction:
Improvefilm formation qualityVSAvoidparticle generation from arcing
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The invention changes the chemical composition parameters of the sputtering target by adding specific elements (Ta, W, Mo, or Hf) to modify the electronic structure and work function of the metal phase, thereby stabilizing discharge and reducing arcing while maintaining film formation quality

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite sputtering target material consisting of metal phases containing Co, Cr, Pt and specific amounts of Ta/W/Mo/Hf (0.01-5 at%), combined with oxide particles, forming a multi-component system that achieves both stable discharge and high-quality film formation

Inventive Principle:
Principle #40Composite materials

2Reliability

If discharge stability is improved by adding elements with lower work function, then arcing is reduced, but handling and maintenance become more difficult

Engineering Contradiction:
Improvedischarge stabilityVSAvoidhandling and maintenance
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

Instead of using elements with very low work functions that are difficult to handle, the invention optimizes the content of Ta/W/Mo/Hf within a specific range (0.01-5 at%) to achieve sufficient discharge stability while maintaining ease of handling and manufacturing

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention applies the low-work-function element strategy locally by adding small, controlled amounts of Ta/W/Mo/Hf specifically to the metal phase, rather than using elements throughout the entire target, thereby achieving discharge stability with minimal impact on handling

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The introduction of Bi in the sputtering target effectively stabilizes discharge, reduces arcing, and suppresses particle generation, even at lower electron densities and gas pressures, while being easier to handle and maintain than other metals with lower work functions.

Implementation Method 1

stabilizing discharge and reducing arcing by lowering the work function and enhancing electron emission

Methodology Applied
Scientific EffectWork function reduction:

Implementation Method 2

stabilizing discharge and reducing arcing by lowering the work function and enhancing electron emission

Methodology Applied
Scientific EffectElectron emission:

Implementation Method 3

stabilizing discharge and reducing arcing by lowering the work function and enhancing electron emission

Methodology Applied
Scientific EffectElectron emission enhancement:

Data Source

PatentUS11894221B2Sputtering target and magnetic film
Publication Date: 2024.02.06 JX NIPPON MINING & METALS CORP

AI summary

Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.