Bias Current Circuit Switching for Fast Flash Memory Startup
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Solution Overview
Problem
Conventional bias current generation circuits require a long setting time to enter normal operation, which does not meet the high requirements of flash memory integrated designs.
Innovation Solution
A bias current generation circuit comprising a voltage source, a switching circuit, and a current generation circuit with diode-connected MOS transistors, allowing the circuit to enter normal operation without an enabling circuit, utilizing a control signal to control the switching circuit and generate bias current efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an enabling circuit is used to switch the bias current generation circuit from 0 ampere state to normal operation state, then the circuit can be controlled to enter normal operation, but the setting time for the bias current becomes relatively long
Solution Approach 1:
The patent removes the enabling circuit from the bias current generation circuit. By directly connecting the switching circuit to the current generation circuit, the patent eliminates the time delay introduced by the enabling circuit while maintaining controllability through the switching circuit's direct response to control signals.
Solution Approach 2:
The patent configures the current generation circuit with MOS transistors and resistors in advance such that when the switching circuit turns on, the bias current is immediately generated without requiring preliminary enabling steps. The circuit is pre-configured to respond instantly to the switching signal.
2Reliability
If a conventional bias current generation circuit with enabling circuit is used, then the circuit structure is complete and controllable, but it does not meet the high requirements of flash memory integrated design on setting time
Solution Approach 1:
The patent extracts and removes the enabling circuit from the conventional bias current generation circuit. This elimination of the enabling circuit step directly reduces the setting time while the switching circuit maintains the necessary control functionality, thus improving productivity without sacrificing circuit completeness.
Solution Approach 2:
The patent uses a switching circuit that can dynamically and immediately respond to control signals to turn on the current generation circuit. This dynamic response mechanism allows the circuit to adapt quickly to control signals, meeting the high speed requirements of flash memory integrated design.
3Ease of operation
If the bias current generation circuit uses an enabling circuit to switch from 0 ampere to normal operation, then the circuit can be controlled, but the setting time is too long for flash memory applications
Solution Approach 1:
The patent removes the enabling circuit that caused the time delay, while maintaining controllability through the switching circuit that directly controls the current generation circuit. This extraction of the unnecessary enabling step resolves the contradiction between ease of operation and time loss.
Solution Approach 2:
The switching circuit acts as an effective intermediary that directly controls the current generation circuit without the need for an enabling circuit. This intermediary mechanism provides both ease of operation through control signals and rapid response by eliminating intermediate enabling steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the bias current generation circuit to set the bias current within a short time, satisfying the flash IP's requirement on setting time and ensuring stable operation across various process corners and temperatures.
Implementation Method 1
The current generation circuit includes a first MOS transistor and a second MOS transistor, an input terminal of the first MOS transistor and a control terminal of the first MOS transistor are connected to an output terminal of the switching circuit
Data Source
AI summary
A bias current generation circuit and a flash memory. The bias current generation circuit includes a voltage source, a switching circuit and a current generation circuit. The voltage source is configured to provide a voltage for generating a bias current. An input terminal of the switching circuit is connected to the voltage source, a control terminal of the switching circuit is configured to receive a control signal. The current generation circuit includes a first MOS transistor and a second MOS transistor, an input terminal and a control terminal of the first MOS transistor are connected to an output terminal of the switching circuit, an output terminal of the first MOS transistor is connected to an input terminal and a control terminal of the second MOS transistor, and an output terminal of the second MOS transistor is grounded.