Magnetron Sputtering Assembly for Single-Chamber Wafer Pre-Clean
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Solution Overview
Problem
The existing semiconductor aluminum nitride (AlN) film deposition process requires separate pre-cleaning and deposition chambers, leading to high manufacturing and maintenance costs, as well as prolonged process times due to wafer transfer between chambers, which limits production capability.
Innovation Solution
A magnetron sputtering apparatus integrating a process chamber, bias power supply assembly, excitation power supply assembly, base assembly, and target, allowing for both pre-cleaning and film deposition processes to be performed in the same chamber, with the base assembly supporting and heating the wafer carrier and the bias guide assembly applying bias voltage to generate plasma for cleaning, and the excitation power supply forming plasma for deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate pre-cleaning and deposition chambers are used, then the pre-cleaning and deposition processes can be performed independently, but the manufacturing cost and maintenance cost increase, and the process time is prolonged due to wafer transfer between chambers
Solution Approach 1:
The patent combines the pre-cleaning chamber and deposition chamber into a single integrated chamber. The chamber can operate in different modes (pre-cleaning mode and deposition mode) by controlling the position of the target and the application of power, eliminating the need for separate chambers and wafer transfer operations while maintaining process quality and improving productivity
2Reliability
If separate pre-cleaning and deposition chambers are used, then the pre-cleaning and deposition processes can be performed independently, but the manufacturing cost and maintenance cost increase
Solution Approach 1:
The patent integrates multiple functions (pre-cleaning and deposition) into a single chamber structure, reducing the total number of chambers required. This consolidation lowers manufacturing costs by reducing material usage, assembly complexity, and maintenance requirements while preserving the independent control needed for process quality
Solution Approach 2:
The single chamber is designed to perform multiple functions: it can serve as a pre-cleaning chamber when the target is retracted and bias power is applied, and as a deposition chamber when the target is positioned and excitation power is applied. This multi-functionality eliminates the need for separate dedicated chambers, reducing manufacturing and maintenance costs
3Reliability
If separate pre-cleaning and deposition chambers are used, then the pre-cleaning and deposition processes can be performed independently, but the process time is prolonged due to wafer transfer between chambers
Solution Approach 1:
By combining pre-cleaning and deposition operations in a single chamber, the patent eliminates the wafer transfer step between chambers. The wafer remains in the same chamber throughout the entire process, and the system transitions between pre-cleaning and deposition modes by adjusting target position and power application, significantly reducing total process time while maintaining process quality
Solution Approach 2:
The patent enables continuous processing by eliminating interruptions for wafer transfer between chambers. The wafer undergoes pre-cleaning and then deposition in sequence within the same chamber without removal or transfer, maintaining continuous useful action and reducing idle time associated with chamber transitions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration reduces manufacturing and maintenance costs, eliminates the need for wafer transfer between chambers, shortens process time, and enhances production capacity by enabling simultaneous pre-cleaning and deposition within a single chamber.
Implementation Method 1
Argon (Ar) or nitrogen (N2) is introduced into the pre-cleaning chamber. The argon or nitrogen is excited to form a plasma in the pre-cleaning chamber. The plasma bombard the wafer to pre-clean the wafer.
Implementation Method 2
The plasma bombard the wafer to pre-clean the wafer
Implementation Method 3
An aluminum target is bombarded by argon ions to generate aluminum atoms. AlN is formed by combining the aluminum atoms with nitrogen atoms in the nitrogen and is deposited on the wafer to form the AlN film deposited on the wafer.
Implementation Method 4
Argon and nitrogen are introduced into the deposition chamber. The argon and nitrogen are excited to form a plasma in the deposition chamber.
Data Source
AI summary
The present disclosure provides a magnetron sputtering apparatus, including a process chamber, a bias power supply assembly, and an excitation power supply assembly. The process chamber is provided with a base assembly and a bias guide assembly. A target is arranged at a top of the process chamber. The base assembly is arranged at a bottom of the process chamber and is configured to support a wafer carrier, drive the wafer carrier to move, and heat the wafer carrier. The bias guide assembly is arranged at the base assembly and configured to support the wafer carrier. The bias guide assembly is electrically in contact with the wafer carrier. The bias power supply assembly is electrically connected to the bias guide assembly and configured to apply a bias voltage to the wafer carrier through the bias guide assembly.