Bias Voltage Generation Circuit for Breakdown-Safe Power Switching

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Solution Overview

Problem

Existing semiconductor storage devices face challenges in protecting elements from excessive loads due to mismatched power source voltages and varying power states, leading to potential element breakdown.

Innovation Solution

A voltage generation circuit that includes a voltage dividing circuit, bias circuit, and power source switching control circuit to generate and regulate bias voltages, ensuring they do not exceed element breakdown voltages, and provides paths for electricity conduction or cutoff based on power source constraints.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If power source voltage is supplied from host to memory controller, then power consumption is reduced, but element breakdown may occur due to voltage mismatch

Engineering Contradiction:
Improvepower consumptionVSAvoidelement breakdown protection
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

A voltage generation circuit is introduced as an intermediary between the host interface and memory elements. This circuit receives power source voltage from the host and generates appropriate bias voltages for memory elements, preventing direct voltage mismatch damage while maintaining low power consumption operation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The voltage generation circuit dynamically adjusts bias voltage parameters based on the power source voltage level and memory operation state. By changing voltage parameters adaptively, the circuit protects elements from excessive voltage while enabling efficient low-voltage operation when appropriate.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If voltage generation circuit generates bias voltage based on element breakdown voltage, then element protection is improved, but circuit complexity increases

Engineering Contradiction:
Improveelement protectionVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The voltage generation circuit is segmented into multiple functional blocks: a voltage dividing circuit for generating initial bias voltages, a control circuit for detecting power source voltage levels, and switching circuits for selecting appropriate voltage paths. This segmentation makes the complex protection function more manageable and implementable.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The circuit performs preliminary voltage generation and regulation before power is fully supplied to memory elements. By pre-establishing appropriate bias voltages through the voltage dividing circuit and control logic, the system ensures elements are protected from voltage spikes during power transitions.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If voltage dividing circuit is used to generate bias voltages, then element breakdown protection is improved, but voltage regulation precision decreases

Engineering Contradiction:
Improvebreakdown protectionVSAvoidvoltage regulation precision
Core Design Contradiction:
ReliabilityVSMeasurement precision

Solution Approach 1:

The control circuit monitors the generated bias voltages and power source voltage levels, using this feedback information to adjust switching decisions. This feedback mechanism compensates for the inherent imprecision of voltage dividing circuits, maintaining adequate voltage regulation while preserving breakdown protection functionality.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The circuit effectively protects elements by generating and regulating bias voltages within safe limits, ensuring reliable operation under varying power source conditions, including when power is off or exceeds expected levels.

Implementation Method 1

a voltage dividing circuit configured to generate first bias voltage of a first voltage value and second bias voltage of a second voltage value by dividing applied voltage

Methodology Applied
Scientific EffectVoltage division: Electrical Resistance

Implementation Method 2

a bias circuit configured to generate voltage by dividing power source voltage supplied through a first input terminal

Methodology Applied
Scientific EffectResistive voltage division: Electrical Resistance

Data Source

PatentUS12474727B2Voltage generation circuit and semiconductor device
Publication Date: 2025.11.18 KIOXIA CORP
  • US12474727B2 patent drawing
  • US12474727B2 patent drawing
  • US12474727B2 patent drawing

AI summary

A voltage generation circuit includes a voltage dividing circuit, a first current path, a second current path, a first output terminal, a second output terminal, and a switching circuit. The first current path is in parallel with the voltage dividing circuit between a first node connected to a power source line and a second node. The second current path is in parallel with the voltage dividing circuit between a third node and a fourth node. The first output terminal is connected to the second node. The second output terminal is connected to the third node. The switching circuit is configured to switch connection of the first current path and the second current path. The first node, the second node, the third node, and the fourth node are connected in series in the voltage dividing circuit.