Biased Field Plate Trenches for High-Voltage Doped Regions
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Solution Overview
Problem
Existing microelectronic devices face challenges in minimizing the area of doped regions while maintaining specified ohmic resistance in the on state and operational bias in the off state.
Innovation Solution
The microelectronic device incorporates field plate segments in trenches extending into the doped region, with circuitry to apply bias potentials to these segments, ensuring that the bias potentials are monotonic with respect to distances from the doped region, thereby reducing the electric field and allowing for higher operational potentials and reduced ohmic resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the area of the doped region is minimized, then the device area is reduced, but the ohmic resistance in the on state increases
Solution Approach 1:
The patent applies different doping concentrations to different regions within the doped structure. The lightly-doped drift region has lower doping concentration to reduce breakdown voltage and maintain higher operational bias in the off state, while the heavily-doped contact regions have higher doping concentration to reduce ohmic resistance. This local variation in doping quality allows the device to achieve both small area and low resistance simultaneously.
2Area of moving object
If the area of the doped region is minimized, then the device area is reduced, but the operational bias in the off state deteriorates
Solution Approach 1:
The drift region is designed with a specific lightly-doped profile that extends vertically to provide the necessary breakdown voltage while occupying minimal lateral area. This local quality optimization in the drift region maintains high operational bias in the off state despite the overall minimization of doped region area.
3Power
If higher operational potentials are applied, then the device performance is improved, but the electric field increases causing breakdown
Solution Approach 1:
The patent changes the doping concentration parameter throughout the device structure. The lightly-doped drift region has doping concentration optimized to sustain high electric fields without breakdown, enabling higher operational potentials. The heavily-doped contact regions have doping concentration optimized to maintain low resistance. This parameter optimization allows the device to operate at higher potentials while controlling the electric field to prevent breakdown.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the microelectronic device to operate at higher drain bias in the off state and lower ohmic resistance in the on state, while maintaining a balanced electric field and charge balance, thus enhancing the device's performance and efficiency.
Implementation Method 1
The circuitry is configured to apply a first bias potential to the first field plate segment, apply a second bias potential to the second field plate segment, and apply a third bias potential to the third field plate segment. The first bias potential, the second bias potential, and the third bias potential are all between the first operational potential and the second operational potential. The third bias potential is between the first bias potential and the second bias potential.
Data Source
AI summary
A microelectronic device includes a doped region of semiconductor material having a first region and an opposite second region. The microelectronic device is configured to provide a first operational potential at the first region and to provide a second operational potential at the second region. The microelectronic device includes field plate segments in trenches extending into the doped region. Each field plate segment is separated from the semiconductor material by a trench liner of dielectric material. The microelectronic device further includes circuitry electrically connected to each of the field plate segments. The circuitry is configured to apply bias potentials to the field plate segments. The bias potentials are monotonic with respect to distances of the field plate segments from the first region of the doped region.